Sidegating effect of GaN MESFETs grown on sapphire substrate

T. Egawa, H. Ishikawa, T. Jimbo, M. Umeno

研究成果: Article

7 引用 (Scopus)

抜粋

A GaN metal semiconductor field effect transistor (MESFET) with 2μm gate-length and 200 μm gate-width has been fabricated on a sapphire substrate. The electron mobilities for the n-GaN layer were 585cm2/V·s with a carrier concentration of 1.1 x 1017cm-3 at 300K, and 1217cm2/V·s with 2.4 ×1016cm-3 at 77K. A GaN MESFET showed a transconductance of 31 mS/mm and a drain-source current of 288mA/mm. The sidegating effect was observed when the negative bias was applied to the sidegate electrode.

元の言語English
ページ(範囲)598-600
ページ数3
ジャーナルElectronics Letters
34
発行部数6
DOI
出版物ステータスPublished - 1998 3 19

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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