Similarities of lag phenomena and current collapse in field-plate AlGaN/GaN HEMTs with different types of buffer layers

Engineering & Materials Science

• Buffer layers 100%
• High electron mobility transistors 81%
• Electron energy levels 65%
• Valence bands 25%
• Conduction bands 23%
• Drain current 17%
• Electrons 14%
• Transient analysis 13%
• Electric potential 7%

Chemical Compounds

• Electron Mobility 83%
• Deep Donor 50%
• Buffer Solution 45%
• Energy 26%
• Drain Current 21%
• Valence Band 15%
• Conduction Band 15%
• Electron Acceptor 13%
• Plate Like Crystal 11%
• Voltage 10%
• Length 8%
• Reduction 6%
• Time 5%

Physics & Astronomy

• high electron mobility transistors 72%
• time lag 59%
• buffers 59%
• energy levels 37%
• conduction bands 10%
• trapping 9%
• valence 8%
• electric potential 6%