Similarities of lags, current collapse and breakdown characteristics between source and gate field-plate AlGaN/GaN HEMTs

H. Hanawa, H. Onodera, A. Nakajima, K. Horio

研究成果: Conference contribution

5 引用 (Scopus)

抜粋

Two-dimensional analysis of lag phenomena, current collapse and breakdown voltages in source-field-plate AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer, and the results are compared with those for the case of gate-field-plate structure. It is shown that the reduction rate of drain-lag is similar between the two structures, but the reduction rates of gate lag and current collapse are smaller for the source-field-plate structure. This is because the electric field at the drain edge of the gate becomes higher in the off state and the trapping effects become more significant. For this reason, an off-state breakdown voltage is a little lower in the source-field-plate structure. It is suggested that there is an optimum thickness of SiN passivation layer to minimize the buffer-related current collapse in both structures.

元の言語English
ホスト出版物のタイトル2013 IEEE International Reliability Physics Symposium, IRPS 2013
ページCD.1.1-CD.1.5
DOI
出版物ステータスPublished - 2013 8 7
イベント2013 IEEE International Reliability Physics Symposium, IRPS 2013 - Monterey, CA, United States
継続期間: 2013 4 142013 4 18

出版物シリーズ

名前IEEE International Reliability Physics Symposium Proceedings
ISSN(印刷物)1541-7026

Conference

Conference2013 IEEE International Reliability Physics Symposium, IRPS 2013
United States
Monterey, CA
期間13/4/1413/4/18

ASJC Scopus subject areas

  • Engineering(all)

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  • これを引用

    Hanawa, H., Onodera, H., Nakajima, A., & Horio, K. (2013). Similarities of lags, current collapse and breakdown characteristics between source and gate field-plate AlGaN/GaN HEMTs. : 2013 IEEE International Reliability Physics Symposium, IRPS 2013 (pp. CD.1.1-CD.1.5). [6532058] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2013.6532058