Simplified Simulation of GaAs MESFETs with Semi-insulating Substrates Compensated by Deep Levels

K.Horio K.Horio, Y.Fuseya Y.Fuseya, H.Kusuki H.Kusuki, H.Yanai H.Yanai, Kazushige Horio

研究成果: Article › 査読

本文言語	English
ページ（範囲）	41-42
ジャーナル	Proceedings of IEEE NUPAD III Conference, Hawaii, USA
出版ステータス	Published - 1990 6月 1

引用スタイル

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title = "Simplified Simulation of GaAs MESFETs with Semi-insulating Substrates Compensated by Deep Levels",

author = "K.Horio K.Horio and Y.Fuseya Y.Fuseya and H.Kusuki H.Kusuki and H.Yanai H.Yanai and Kazushige Horio",

year = "1990",

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language = "English",

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journal = "Proceedings of IEEE NUPAD III Conference, Hawaii, USA",

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T1 - Simplified Simulation of GaAs MESFETs with Semi-insulating Substrates Compensated by Deep Levels

AU - K.Horio, K.Horio

AU - Y.Fuseya, Y.Fuseya

AU - H.Kusuki, H.Kusuki

AU - H.Yanai, H.Yanai

AU - Horio, Kazushige

PY - 1990/6/1

Y1 - 1990/6/1

M3 - Article

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EP - 42

JO - Proceedings of IEEE NUPAD III Conference, Hawaii, USA

JF - Proceedings of IEEE NUPAD III Conference, Hawaii, USA

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