Simplified Simulations of GaAs MESFET's with Semi-Insulating Substrate Compensated by Deep Levels

Kazushige Horio, Yasuji Fuseya, Hiroyuki Kusuki, Hisayoshi Yanai

研究成果: Article査読

8 被引用数 (Scopus)

抄録

Current-voltage characteristics of GaAs metal-semiconductor field effect transistors (MESFET's) (with p-buffer layers) on semi-insulating substrates compensated by deep levels are simulated by two-carrier and one-carrier models. For a thicker p-buffer layer or for higher acceptor density in the substrate, the drain current becomes lower because the substrate current is reduced. The one-carrier model also gives reasonable results for a case with a hole-trap substrate. Small-signal parameters of GaAs MESFET's on various types of substrates are also simulated. It is found that for a thicker p-buffer layer or for higher acceptor densities in the semi-insulating substrates, the substrate current is reduced, and both transconductance and cutoff frequency become higher. It is concluded that to utilize high-speed and high-frequency performance of GaAs MESFET's acceptor densities in the substrate should be made high.

本文言語English
ページ(範囲)1295-1302
ページ数8
ジャーナルIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
10
10
DOI
出版ステータスPublished - 1991 10

ASJC Scopus subject areas

  • ソフトウェア
  • コンピュータ グラフィックスおよびコンピュータ支援設計
  • 電子工学および電気工学

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