SIMS study of SiC single crystal oxidized in atmosphere containing isotopic water vapor

Takaya Akashi, Miho Kasajima, Hajime Kiyono, Shiro Shimada

研究成果: Article

7 引用 (Scopus)

抄録

Double oxidation of SiC single crystal was carried out in oxidizing gas (O2 or H2O) at 1673 K first and then in isotopic water (H2 18O or D2O) at 1473 K or 1573 K to trace diffusing species during oxidation at high temperatures. SIMS analysis revealed that deuterium was enriched near SiO2/SiC interface when SiC was oxidized in Ar/D2O gas mixture at the second oxidation step, indicating that water molecules or hydroxyls diffused in SiO2 layer to the SiO2/SiC interface. Large amount of carbon in SiO2 scale near the SiO2/SiC interface after oxidation in dry Ar/O 2 gas mixture suggests a possibility that outward diffusion of carbonaceous species can be rate-controlling step during oxidation in dry Ar/O2 atmosphere. Decrease in the amount of the carbon with oxidation time in Ar/H2 18O gas mixture at the second oxidation step implies that the outward diffusion of carbon-aceous species in SiO2 scale was promoted during oxidation in atmosphere containing water vapor.

元の言語English
ページ(範囲)960-964
ページ数5
ジャーナルNippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan
116
発行部数1357
出版物ステータスPublished - 2008 9
外部発表Yes

Fingerprint

Steam
Secondary ion mass spectrometry
Water vapor
secondary ion mass spectrometry
water vapor
Single crystals
atmospheres
Oxidation
oxidation
single crystals
Gas mixtures
gas mixtures
Carbon
carbon
Water
Deuterium
Hydroxyl Radical
water
deuterium
Gases

ASJC Scopus subject areas

  • Ceramics and Composites

これを引用

@article{dc8f63edf9a04853a21fb43ddd9596f5,
title = "SIMS study of SiC single crystal oxidized in atmosphere containing isotopic water vapor",
abstract = "Double oxidation of SiC single crystal was carried out in oxidizing gas (O2 or H2O) at 1673 K first and then in isotopic water (H2 18O or D2O) at 1473 K or 1573 K to trace diffusing species during oxidation at high temperatures. SIMS analysis revealed that deuterium was enriched near SiO2/SiC interface when SiC was oxidized in Ar/D2O gas mixture at the second oxidation step, indicating that water molecules or hydroxyls diffused in SiO2 layer to the SiO2/SiC interface. Large amount of carbon in SiO2 scale near the SiO2/SiC interface after oxidation in dry Ar/O 2 gas mixture suggests a possibility that outward diffusion of carbonaceous species can be rate-controlling step during oxidation in dry Ar/O2 atmosphere. Decrease in the amount of the carbon with oxidation time in Ar/H2 18O gas mixture at the second oxidation step implies that the outward diffusion of carbon-aceous species in SiO2 scale was promoted during oxidation in atmosphere containing water vapor.",
keywords = "Diffusion, Isotope, Oxidation, Silica, Silicon carbide, SIMS, Water",
author = "Takaya Akashi and Miho Kasajima and Hajime Kiyono and Shiro Shimada",
year = "2008",
month = "9",
language = "English",
volume = "116",
pages = "960--964",
journal = "Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan",
issn = "0914-5400",
publisher = "Ceramic Society of Japan/Nippon Seramikkusu Kyokai",
number = "1357",

}

TY - JOUR

T1 - SIMS study of SiC single crystal oxidized in atmosphere containing isotopic water vapor

AU - Akashi, Takaya

AU - Kasajima, Miho

AU - Kiyono, Hajime

AU - Shimada, Shiro

PY - 2008/9

Y1 - 2008/9

N2 - Double oxidation of SiC single crystal was carried out in oxidizing gas (O2 or H2O) at 1673 K first and then in isotopic water (H2 18O or D2O) at 1473 K or 1573 K to trace diffusing species during oxidation at high temperatures. SIMS analysis revealed that deuterium was enriched near SiO2/SiC interface when SiC was oxidized in Ar/D2O gas mixture at the second oxidation step, indicating that water molecules or hydroxyls diffused in SiO2 layer to the SiO2/SiC interface. Large amount of carbon in SiO2 scale near the SiO2/SiC interface after oxidation in dry Ar/O 2 gas mixture suggests a possibility that outward diffusion of carbonaceous species can be rate-controlling step during oxidation in dry Ar/O2 atmosphere. Decrease in the amount of the carbon with oxidation time in Ar/H2 18O gas mixture at the second oxidation step implies that the outward diffusion of carbon-aceous species in SiO2 scale was promoted during oxidation in atmosphere containing water vapor.

AB - Double oxidation of SiC single crystal was carried out in oxidizing gas (O2 or H2O) at 1673 K first and then in isotopic water (H2 18O or D2O) at 1473 K or 1573 K to trace diffusing species during oxidation at high temperatures. SIMS analysis revealed that deuterium was enriched near SiO2/SiC interface when SiC was oxidized in Ar/D2O gas mixture at the second oxidation step, indicating that water molecules or hydroxyls diffused in SiO2 layer to the SiO2/SiC interface. Large amount of carbon in SiO2 scale near the SiO2/SiC interface after oxidation in dry Ar/O 2 gas mixture suggests a possibility that outward diffusion of carbonaceous species can be rate-controlling step during oxidation in dry Ar/O2 atmosphere. Decrease in the amount of the carbon with oxidation time in Ar/H2 18O gas mixture at the second oxidation step implies that the outward diffusion of carbon-aceous species in SiO2 scale was promoted during oxidation in atmosphere containing water vapor.

KW - Diffusion

KW - Isotope

KW - Oxidation

KW - Silica

KW - Silicon carbide

KW - SIMS

KW - Water

UR - http://www.scopus.com/inward/record.url?scp=51149113325&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=51149113325&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:51149113325

VL - 116

SP - 960

EP - 964

JO - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan

JF - Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan

SN - 0914-5400

IS - 1357

ER -