Simulation of back-electrode effects on lags and current collapse in field-plate AlGaN/GaN HEMTs

K. Horio, H. Onodera, T. Fukai

研究成果: Conference contribution

抄録

Two-dimensional transient analysis of field-plate AlGaN/GaN HEMTs with a back electrode is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that the introduction of field plate is effective in reducing current collapse when the acceptor density is high. On the other hand, the introduction of back electrode is effective in reducing current collapse particularly when the acceptor density is relatively low. It is also shown that applying a negative voltage to the back electrode is not so effective in reducing current collapse when the deep donor acts as an electron trap.

本文言語English
ホスト出版物のタイトルTechnical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
ページ497-500
ページ数4
出版ステータスPublished - 2013 8 9
イベントNanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013 - Washington, DC, United States
継続期間: 2013 5 122013 5 16

出版物シリーズ

名前Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
2

Conference

ConferenceNanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
国/地域United States
CityWashington, DC
Period13/5/1213/5/16

ASJC Scopus subject areas

  • バイオテクノロジー

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