Simulation of breakdown characteristics of AlGaN/GaN hemts with double passivation layers

K. Nakano, H. Hanawa, Kazushige Horio

研究成果: Conference contribution

抜粋

Two-dimensional analysis of off-state drain currentdrain voltage characteristics in AlGaN/GaN high electron mobility transistors is performed; where two cases with a single passivation layer (SiN or high-£ dielectric) and double passivation layers (SiN and high-jfc dielectric) are compared. It is shown that in the case of double passivation layers, the breakdown voltage is enhanced significantly as compared to the case of SiN single passivation layer when comparing at the same insulator thickness. This is because the electric field around the drain edge of gate is weakened. However, it is lowered remarkably as compared to the case with a high-k single passivation layer even if the first SiN layer is rather thin. Also, in the case of double passivation layers, the breakdown voltage is shown to become close to the case with high-k passivation layer when the relative permittivity of the second passivation layer becomes high and the SiN layer is thin.

元の言語English
ホスト出版物のタイトルTechConnect Briefs 2018 - Informatics, Electronics and Microsystems
編集者Matthew Laudon, Fiona Case, Bart Romanowicz, Fiona Case
出版者TechConnect
ページ20-23
ページ数4
4
ISBN(電子版)9780998878256
出版物ステータスPublished - 2018 1 1
イベント11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo,the 2018 SBIR/STTR Spring Innovation Conference, and the Defense TechConnect DTC Spring Conference - Anaheim, United States
継続期間: 2018 5 132018 5 16

Other

Other11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo,the 2018 SBIR/STTR Spring Innovation Conference, and the Defense TechConnect DTC Spring Conference
United States
Anaheim
期間18/5/1318/5/16

ASJC Scopus subject areas

  • Materials Science(all)

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  • これを引用

    Nakano, K., Hanawa, H., & Horio, K. (2018). Simulation of breakdown characteristics of AlGaN/GaN hemts with double passivation layers. : M. Laudon, F. Case, B. Romanowicz, & F. Case (版), TechConnect Briefs 2018 - Informatics, Electronics and Microsystems (巻 4, pp. 20-23). TechConnect.