Simulation of breakdown voltage enhancement in AlGaN/GaN HEMTs with double passivation layers

Kazushige Horio, H. Hanawa

研究成果: Conference contribution

抜粋

Two-dimensional analysis of off-state drain currentdrain voltage characteristics in AlGaN/GaN HEMTs is performed; where two cases with a single passivation layer (SiN) and double passivation layers (thin SiN and high-k dielectric) are compared. It is shown that in the case of double passivation layers, the breakdown voltage is enhanced significantly when comparing at the same insulator thickness, because the electric field at the drain edge of the gate is reduced. It is also shown that in the case of double passivation layers, the breakdown voltage becomes higher when the relative permittivity of the second passivation layer becomes higher.

元の言語English
ホスト出版物のタイトルInformatics, Electronics and Microsystems - TechConnect Briefs 2017
出版者TechConnect
ページ39-42
ページ数4
4
ISBN(電子版)9780998878218
出版物ステータスPublished - 2017
イベント11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference - Washington, United States
継続期間: 2017 5 142017 5 17

Other

Other11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference
United States
Washington
期間17/5/1417/5/17

ASJC Scopus subject areas

  • Fuel Technology
  • Surfaces, Coatings and Films
  • Biotechnology
  • Fluid Flow and Transfer Processes

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  • これを引用

    Horio, K., & Hanawa, H. (2017). Simulation of breakdown voltage enhancement in AlGaN/GaN HEMTs with double passivation layers. : Informatics, Electronics and Microsystems - TechConnect Briefs 2017 (巻 4, pp. 39-42). TechConnect.