Simulation of buffer current effects on breakdown voltage in AIGaN/GaN HEMTs having passivation layers with different permittivity

Y. Satoh, H. Hanawa, Kazushige Horio

研究成果: Conference contribution

抄録

A two-dimensional simulation of off-state breakdown characteristics in AIGaN/GaN HEMTs is performed, with the relative permittivity of passivation layer ϵr as a parameter. The simulation is made with and without impact ionization of carriers to study how the buffer leakage current affects the breakdown chracteristics. It is shown that when ϵr is low, the breakdown voltage is determined by the impact ionization of carriers, and when ϵr becomes high, it is determined by the buffer leakage current. This buffer leakage current decreases as ϵr increases because the electric field at the drain edge of the gate is weakened, and hence the breakdown voltage increases as ϵr increases.

本文言語English
ホスト出版物のタイトルAdvanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016
出版社TechConnect
ページ113-116
ページ数4
4
ISBN(電子版)9780997511734
出版ステータスPublished - 2016
イベント10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 19th Annual Nanotech Conference and Expo, and the 2016 National SBIR/STTR Conference - Washington, United States
継続期間: 2016 5 222016 5 25

Other

Other10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 19th Annual Nanotech Conference and Expo, and the 2016 National SBIR/STTR Conference
国/地域United States
CityWashington
Period16/5/2216/5/25

ASJC Scopus subject areas

  • 流体および伝熱
  • バイオテクノロジー
  • 表面、皮膜および薄膜
  • 燃料技術

フィンガープリント

「Simulation of buffer current effects on breakdown voltage in AIGaN/GaN HEMTs having passivation layers with different permittivity」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル