A two-dimensional simulation of off-state breakdown characteristics in AIGaN/GaN HEMTs is performed, with the relative permittivity of passivation layer ϵr as a parameter. The simulation is made with and without impact ionization of carriers to study how the buffer leakage current affects the breakdown chracteristics. It is shown that when ϵr is low, the breakdown voltage is determined by the impact ionization of carriers, and when ϵr becomes high, it is determined by the buffer leakage current. This buffer leakage current decreases as ϵr increases because the electric field at the drain edge of the gate is weakened, and hence the breakdown voltage increases as ϵr increases.
|ホスト出版物のタイトル||Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016|
|出版ステータス||Published - 2016|
|イベント||10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 19th Annual Nanotech Conference and Expo, and the 2016 National SBIR/STTR Conference - Washington, United States|
継続期間: 2016 5月 22 → 2016 5月 25
|Other||10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 19th Annual Nanotech Conference and Expo, and the 2016 National SBIR/STTR Conference|
|Period||16/5/22 → 16/5/25|
ASJC Scopus subject areas