Simulation of buffer current effects on breakdown voltage in AIGaN/GaN HEMTs having passivation layers with different permittivity

Chemical Compounds

• Breakdown Voltage 100%
• Leakage Current 87%
• Impact Ionization 78%
• Permittivity 74%
• Chemical Passivation 67%
• Buffer Solution 43%
• Simulation 42%
• Dielectric Constant 20%
• Electric Field 20%

Engineering & Materials Science

• Passivation 80%
• High electron mobility transistors 77%
• Electric breakdown 75%
• Leakage currents 71%
• Impact ionization 69%
• Permittivity 67%
• Electric fields 20%

Medicine & Life Sciences

• Buffers 62%