Simulation of buffer-related current slump in AlGaN/GaN HEMTs

研究成果: Conference contribution

抜粋

Transient simulations of AlGaN/GaN HEMTs are performed in which a three-level compensation model is adopted for a semi-insulating buffer-layer, where a shallow donor, a deep donor and a deep acceptor are considered. Quasi-pulsed I-V curves are derived from the transient characteristics, and are compared with steady-state I-V curves. It is shown that so-called current slump is more pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current slump in AlGaN/GaN HEMTs, an acceptor density in a semi-insulating buffer layer should be made low.

元の言語English
ホスト出版物のタイトル2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings
ページ687-690
ページ数4
3
出版物ステータスPublished - 2007
イベント2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007 - Santa Clara, CA
継続期間: 2007 5 202007 5 24

Other

Other2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007
Santa Clara, CA
期間07/5/2007/5/24

    フィンガープリント

ASJC Scopus subject areas

  • Mechanical Engineering

これを引用

Horio, K. (2007). Simulation of buffer-related current slump in AlGaN/GaN HEMTs. : 2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings (巻 3, pp. 687-690)