Simulation of current slump removal in field-plate GaAs MESFETs

A. Nomoto, Y. Sato, Kazushige Horio

研究成果: Conference contribution

抜粋

Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. The field-plate length LFP and the thickness of SiO2 passivation layer d are varied as parameters. It is shown that the drain lag and current slump are reduced by introducing a field plate longer than the length of surface-state region Ls, but they are not removed completely when d is thick. It is clearly shown that when d becomes very thin (≤ 0.02 μm), the lags and current slump are completely removed for LFP longer than Ls. By carefully examining the LFP dependence for d = 0.02 μm, it is found that they are completely removed even if LFP is comparable to Ls.

元の言語English
ホスト出版物のタイトルNSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015
出版者Taylor and Francis Inc.
ページ270-273
ページ数4
4
ISBN(電子版)9781498747301
出版物ステータスPublished - 2015
イベント10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference - Washington, United States
継続期間: 2015 6 142015 6 17

Other

Other10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference
United States
Washington
期間15/6/1415/6/17

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Fluid Flow and Transfer Processes
  • Biotechnology
  • Fuel Technology

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  • これを引用

    Nomoto, A., Sato, Y., & Horio, K. (2015). Simulation of current slump removal in field-plate GaAs MESFETs. : NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015 (巻 4, pp. 270-273). Taylor and Francis Inc..