Simulation of current slump removal in field-plate GaAs MESFETs with a thin passivation layer

A. Nomoto, Y. Sato, Kazushige Horio

研究成果: Conference contribution

抄録

Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. The field-plate length LFP and the thickness of SiO2 passivation layer Ti are varied as parameters. It is shown that the drain lag is not removed when Ti is thick even if LFP is longer than the length of surface-state region Ls. But when Ti becomes thinner than 0.02 μm, the drain lag, gate lag and current slump are completely removed by introducing a field plate longer than Ls because the surface-state effects may be masked. By carefully examining the LFP dependence of lags and current collapse for Ti = 0.02 μm, they are found to be completely removed even if LFP is alittle shorter than Ls.

本文言語English
ホスト出版物のタイトルAdvanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016
出版社TechConnect
ページ117-120
ページ数4
4
ISBN(電子版)9780997511734
出版ステータスPublished - 2016
イベント10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 19th Annual Nanotech Conference and Expo, and the 2016 National SBIR/STTR Conference - Washington, United States
継続期間: 2016 5 222016 5 25

Other

Other10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 19th Annual Nanotech Conference and Expo, and the 2016 National SBIR/STTR Conference
CountryUnited States
CityWashington
Period16/5/2216/5/25

ASJC Scopus subject areas

  • Fluid Flow and Transfer Processes
  • Biotechnology
  • Surfaces, Coatings and Films
  • Fuel Technology

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