Simulation of decrease in lag phenomena and current slump of field-plate GaAs FETs

K. Itagaki, H. Ueda, Y. Terao, K. Horio

研究成果: Conference contribution

抄録

Two-dimensional simulation of GaAs MESFETs with a field plate is performed in which a deep donor "EL2" is considered in a semi-insulating substrate. It is studied how the existence of field plate affects substrate-related lag phenomena and current slump. It is shown that the drain lag and current slump could be reduced by introducing a field plate, because electron trapping in the substrate is weakened by it. Dependence of lag phenomena and current slump on the field-plate length and on the insulator thickness under the field plate is also studied. It is suggested that there are optimum values for the field-plate length and insulator thickness to reduce the current slump and also to maintain the high frequency performance of GaAs FETs.

本文言語English
ホスト出版物のタイトルTechnical Proceedings of the 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009
ページ355-358
ページ数4
出版ステータスPublished - 2009 12 1
イベントNanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling - 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009 - Houston, TX, United States
継続期間: 2009 5 32009 5 7

出版物シリーズ

名前Technical Proceedings of the 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009
3

Conference

ConferenceNanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling - 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009
国/地域United States
CityHouston, TX
Period09/5/309/5/7

ASJC Scopus subject areas

  • バイオテクノロジー
  • 生体医工学
  • 生体材料

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