Simulation of device-structure dependence of surface-related kink phenomena in GaAs FETs

A. Wakabayashi, Y. Kazami, J. Ozawa, Y. Mitani, K. Horio

研究成果: Conference contribution

抄録

The kink (or an abnormal increase in output conductance with the drain voltage) in GaAs FETs can occur due to a space-charge effect originated from generated hole capturing by surface states around the gate. Here, device-structure dependence of kink phenomena in GaAs MESFETs is studied particularly by simulating structures that are intended to reduce the surface-state effects at the source side, such as a recessed-gate structure and a structure with n+-source region.

本文言語English
ホスト出版物のタイトル2003 Nanotechnology Conference and Trade Show - Nanotech 2003
編集者M. Laudon, B. Romanowicz
ページ8-11
ページ数4
出版ステータスPublished - 2003 12 1
イベント2003 Nanotechnology Conference and Trade Show - Nanotech 2003 - San Francisco, CA, United States
継続期間: 2003 2 232003 2 27

出版物シリーズ

名前2003 Nanotechnology Conference and Trade Show - Nanotech 2003
2

Conference

Conference2003 Nanotechnology Conference and Trade Show - Nanotech 2003
CountryUnited States
CitySan Francisco, CA
Period03/2/2303/2/27

ASJC Scopus subject areas

  • Engineering(all)

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