抜粋
Turn-on characteristics of GaAs MESFETs and HEMTs are simulated when the gate voltage is changed abruptly. The gate-lag or slow current transient becomes more pronounced when the off-state gate voltage is more negative, because the surface-state effects or substrate-trap effects become more significant. Changes of I-V curves of GaAs MESFETs, when the drain voltage is swept with different speeds, are also simulated. When the swept time is short, the curve shows overshoot-like behavior and the kink disappears, indicating that the I-V characteristics should be quite different between DC and RF conditions.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 245-249 |
| ページ数 | 5 |
| ジャーナル | VLSI Design |
| 巻 | 13 |
| 発行部数 | 1-4 |
| DOI | |
| 出版物ステータス | Published - 2001 1 1 |
ASJC Scopus subject areas
- Hardware and Architecture
- Computer Graphics and Computer-Aided Design
- Electrical and Electronic Engineering
フィンガープリント Simulation of drastic lag phenomena in GaAs-based FETs for large voltage swing' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。
これを引用
Horio, K., Mitani, Y., Wakabayashi, A., & Kurosawa, N. (2001). Simulation of drastic lag phenomena in GaAs-based FETs for large voltage swing. VLSI Design, 13(1-4), 245-249. https://doi.org/10.1155/2001/87371