Simulation of drastic lag phenomena in GaAs-based FETs for large voltage swing

K. Horio, Y. Mitani, A. Wakabayashi, N. Kurosawa

研究成果: Article査読

抄録

Turn-on characteristics of GaAs MESFETs and HEMTs are simulated when the gate voltage is changed abruptly. The gate-lag or slow current transient becomes more pronounced when the off-state gate voltage is more negative, because the surface-state effects or substrate-trap effects become more significant. Changes of I-V curves of GaAs MESFETs, when the drain voltage is swept with different speeds, are also simulated. When the swept time is short, the curve shows overshoot-like behavior and the kink disappears, indicating that the I-V characteristics should be quite different between DC and RF conditions.

本文言語English
ページ(範囲)245-249
ページ数5
ジャーナルVLSI Design
13
1-4
DOI
出版ステータスPublished - 2001

ASJC Scopus subject areas

  • ハードウェアとアーキテクチャ
  • コンピュータ グラフィックスおよびコンピュータ支援設計
  • 電子工学および電気工学

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