抄録
Turn-on characteristics of GaAs MESFETs and HEMTs are simulated when the gate voltage is changed abruptly. The gate-lag or slow current transient becomes more pronounced when the off-state gate voltage is more negative, because the surface-state effects or substrate-trap effects become more significant. Changes of I-V curves of GaAs MESFETs, when the drain voltage is swept with different speeds, are also simulated. When the swept time is short, the curve shows overshoot-like behavior and the kink disappears, indicating that the I-V characteristics should be quite different between DC and RF conditions.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 245-249 |
| ページ数 | 5 |
| ジャーナル | VLSI Design |
| 巻 | 13 |
| 発行部数 | 1-4 |
| 出版物ステータス | Published - 2001 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Hardware and Architecture
これを引用
Simulation of drastic lag phenomena in GaAs-based FETs for large voltage swing. / Horio, Kazushige; Mitani, Y.; Wakabayashi, A.; Kurosawa, N.
：: VLSI Design, 巻 13, 番号 1-4, 2001, p. 245-249.研究成果: Article
}
TY - JOUR
T1 - Simulation of drastic lag phenomena in GaAs-based FETs for large voltage swing
AU - Horio, Kazushige
AU - Mitani, Y.
AU - Wakabayashi, A.
AU - Kurosawa, N.
PY - 2001
Y1 - 2001
N2 - Turn-on characteristics of GaAs MESFETs and HEMTs are simulated when the gate voltage is changed abruptly. The gate-lag or slow current transient becomes more pronounced when the off-state gate voltage is more negative, because the surface-state effects or substrate-trap effects become more significant. Changes of I-V curves of GaAs MESFETs, when the drain voltage is swept with different speeds, are also simulated. When the swept time is short, the curve shows overshoot-like behavior and the kink disappears, indicating that the I-V characteristics should be quite different between DC and RF conditions.
AB - Turn-on characteristics of GaAs MESFETs and HEMTs are simulated when the gate voltage is changed abruptly. The gate-lag or slow current transient becomes more pronounced when the off-state gate voltage is more negative, because the surface-state effects or substrate-trap effects become more significant. Changes of I-V curves of GaAs MESFETs, when the drain voltage is swept with different speeds, are also simulated. When the swept time is short, the curve shows overshoot-like behavior and the kink disappears, indicating that the I-V characteristics should be quite different between DC and RF conditions.
KW - Drain-lag
KW - GaAs MESFET
KW - Gate-lag
KW - HEMT
KW - Kink phenomena
KW - Trap
UR - http://www.scopus.com/inward/record.url?scp=0035692764&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035692764&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0035692764
VL - 13
SP - 245
EP - 249
JO - VLSI Design
JF - VLSI Design
SN - 1065-514X
IS - 1-4
ER -