抄録
Turn-on characteristics of GaAs MESFETs and HEMTs are simulated when the gate voltage is changed abruptly. The gate-lag or slow current transient becomes more pronounced when the off-state gate voltage is more negative, because the surface-state effects or substrate-trap effects become more significant. Changes of I-V curves of GaAs MESFETs, when the drain voltage is swept with different speeds, are also simulated. When the swept time is short, the curve shows overshoot-like behavior and the kink disappears, indicating that the I-V characteristics should be quite different between DC and RF conditions.
本文言語 | English |
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ページ(範囲) | 245-249 |
ページ数 | 5 |
ジャーナル | VLSI Design |
巻 | 13 |
号 | 1-4 |
DOI | |
出版ステータス | Published - 2001 |
ASJC Scopus subject areas
- ハードウェアとアーキテクチャ
- コンピュータ グラフィックスおよびコンピュータ支援設計
- 電子工学および電気工学