Simulation of field-plate effects on lag and current collapse in GaN-based FETs

K. Itagaki, A. Nakajima, K. Horio

研究成果: Conference contribution

抜粋

2-D transient simulations of GaN MESFETs and AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a buffer layer. It is studied how the existence of field plate affects bufferrelated lag phenomena and current collapse. It is shown that in both FETs, the drain lag and current collapse could be reduced by introducing a field plate, because electron trapping in the buffer layer is weakened by it. The dependence on insulator-thickness under the field plate is also studied, suggesting that there is an optimum thickness of insulator to minimize the current collapse.

元の言語English
ホスト出版物のタイトルTechnical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, NSTI-Nanotech, Nanotechnology 2008
ページ533-536
ページ数4
出版物ステータスPublished - 2008 10 1
イベント2008 NSTI Nanotechnology Conference and Trade Show, NSTI Nanotech 2008 Joint Meeting, Nanotechnology 2008 - Quebec City, QC, United States
継続期間: 2008 6 12008 6 5

出版物シリーズ

名前Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, NSTI-Nanotech, Nanotechnology 2008
3

Conference

Conference2008 NSTI Nanotechnology Conference and Trade Show, NSTI Nanotech 2008 Joint Meeting, Nanotechnology 2008
United States
Quebec City, QC
期間08/6/108/6/5

ASJC Scopus subject areas

  • Mechanical Engineering

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  • これを引用

    Itagaki, K., Nakajima, A., & Horio, K. (2008). Simulation of field-plate effects on lag and current collapse in GaN-based FETs. : Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, NSTI-Nanotech, Nanotechnology 2008 (pp. 533-536). (Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, NSTI-Nanotech, Nanotechnology 2008; 巻数 3).