Simulation of field-plate effects on lag and current collapse in GaN-based FETs

K. Itagaki, A. Nakajima, K. Horio

研究成果: Conference contribution

抄録

2-D transient simulations of GaN MESFETs and AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a buffer layer. It is studied how the existence of field plate affects bufferrelated lag phenomena and current collapse. It is shown that in both FETs, the drain lag and current collapse could be reduced by introducing a field plate, because electron trapping in the buffer layer is weakened by it. The dependence on insulator-thickness under the field plate is also studied, suggesting that there is an optimum thickness of insulator to minimize the current collapse.

本文言語English
ホスト出版物のタイトルTechnical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, NSTI-Nanotech, Nanotechnology 2008
ページ533-536
ページ数4
出版ステータスPublished - 2008
外部発表はい
イベント2008 NSTI Nanotechnology Conference and Trade Show, NSTI Nanotech 2008 Joint Meeting, Nanotechnology 2008 - Quebec City, QC, United States
継続期間: 2008 6月 12008 6月 5

出版物シリーズ

名前Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, NSTI-Nanotech, Nanotechnology 2008
3

Conference

Conference2008 NSTI Nanotechnology Conference and Trade Show, NSTI Nanotech 2008 Joint Meeting, Nanotechnology 2008
国/地域United States
CityQuebec City, QC
Period08/6/108/6/5

ASJC Scopus subject areas

  • 機械工学

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