Simulation of field-plate effects on surface-state-related lag and current slump in GaAs FETs

T. Tanaka, K. Itagaki, A. Nakajima, K. Horio

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Two-dimensional transient analysis of field-plate GaAs MESFETs is performed in which surface states are considered. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that drain lag and current slump due to surface states are reduced by introducing a field plate because fixed potential at the field plate leads to reducing trapping effects by the surface states. Dependence of lag phenomena and current slump on field-plate length and SiO2 passivation layer thickness is also studied, suggesting that there are adequate values of field-plate length and SiO2 layer thickness to reduce current slump and also to maintain high-frequency performance of GaAs FETs.

本文言語English
ホスト出版物のタイトルTechnical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
ページ595-598
ページ数4
出版ステータスPublished - 2011
イベントNanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 - Boston, MA, United States
継続期間: 2011 6 132011 6 16

出版物シリーズ

名前Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
2

Conference

ConferenceNanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
CountryUnited States
CityBoston, MA
Period11/6/1311/6/16

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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