Simulation of high-k passivation-layer effects on breakdown voltage in AlGaN/GaN HEMTs

H. Hanawa, Y. Satoh, Kazushige Horio

研究成果: Conference contribution

抜粋

Two-dimensional analysis of breakdown characteristics in AlGaN/GaN HEMTs is performed as parameters of relative permittivity of the passivation layer ϵr and its thickness d. It is shown that as ϵr increases, the off-state breakdown voltage Vbr increases, because the electric field at the drain edge of the gate is weakened and the buffer leakage current is reduced. It is also shown that Vbr increases as d increases. It is concluded that AlGaN/GaN HEMTs with a high-k and thick passivation layer should have high breakdown voltages.

元の言語English
ホスト出版物のタイトルNSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015
出版者Taylor and Francis Inc.
ページ266-269
ページ数4
4
ISBN(電子版)9781498747301
出版物ステータスPublished - 2015
イベント10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference - Washington, United States
継続期間: 2015 6 142015 6 17

Other

Other10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference
United States
Washington
期間15/6/1415/6/17

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Fluid Flow and Transfer Processes
  • Biotechnology
  • Fuel Technology

フィンガープリント Simulation of high-k passivation-layer effects on breakdown voltage in AlGaN/GaN HEMTs' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Hanawa, H., Satoh, Y., & Horio, K. (2015). Simulation of high-k passivation-layer effects on breakdown voltage in AlGaN/GaN HEMTs. : NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015 (巻 4, pp. 266-269). Taylor and Francis Inc..