Simulation of high-k passivation-layer effects on breakdown voltage in AlGaN/GaN HEMTs

H. Hanawa, Y. Satoh, Kazushige Horio

研究成果: Conference contribution

抄録

Two-dimensional analysis of breakdown characteristics in AlGaN/GaN HEMTs is performed as parameters of relative permittivity of the passivation layer ϵr and its thickness d. It is shown that as ϵr increases, the off-state breakdown voltage Vbr increases, because the electric field at the drain edge of the gate is weakened and the buffer leakage current is reduced. It is also shown that Vbr increases as d increases. It is concluded that AlGaN/GaN HEMTs with a high-k and thick passivation layer should have high breakdown voltages.

本文言語English
ホスト出版物のタイトルNSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015
出版社Taylor and Francis Inc.
ページ266-269
ページ数4
4
ISBN(電子版)9781498747301
出版ステータスPublished - 2015
イベント10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference - Washington, United States
継続期間: 2015 6 142015 6 17

Other

Other10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference
国/地域United States
CityWashington
Period15/6/1415/6/17

ASJC Scopus subject areas

  • 表面、皮膜および薄膜
  • 流体および伝熱
  • バイオテクノロジー
  • 燃料技術

フィンガープリント

「Simulation of high-k passivation-layer effects on breakdown voltage in AlGaN/GaN HEMTs」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル