Simulation of kink behaviour in GaAs MESFET with semi-insulating substrate

K. Horio, K. śatoh

研究成果: Article

4 被引用数 (Scopus)

抄録

A numerical simulation of GaAs MESFETs with semiinsulating substrates impurity-compensated to deep levels is carried out by considering the impact ionisation of the carriers. It is shown that in cases where Cr acts as a hole trap, an increase in drain conductance (‘kink’) arises because holes that are generated by impact ionisation flow into the substrate and are captured by the traps to strongly modulate the space-charge distributions.

本文言語English
ページ(範囲)1128-1130
ページ数3
ジャーナルElectronics Letters
29
12
DOI
出版ステータスPublished - 1993 6

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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