Simulation of kink behaviour in GaAs MESFET with semi-insulating substrate

Kazushige Horio, K. śatoh

研究成果: Article

4 引用 (Scopus)

抄録

A numerical simulation of GaAs MESFETs with semi-insulating substrates impurity-compensated to deep levels is carried out by considering the impact ionization of the carriers. It is shown that in cases where Cr acts as a hole trap, an increase in drain conductance (`kink') arises because holes that are generated by impact ionization flow into the substrate and are captured by the traps to strongly modulate the space-charge distributions.

元の言語English
ページ(範囲)1128-1130
ページ数3
ジャーナルElectronics Letters
29
発行部数12
出版物ステータスPublished - 1993 1 1

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Impact ionization
Hole traps
Charge distribution
Substrates
Electric space charge
Impurities
Computer simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

これを引用

Simulation of kink behaviour in GaAs MESFET with semi-insulating substrate. / Horio, Kazushige; śatoh, K.

:: Electronics Letters, 巻 29, 番号 12, 01.01.1993, p. 1128-1130.

研究成果: Article

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