Simulation of lag and current slump in AlGaN/GaN HEMTs as affected by buffer trapping

A. Nakajima, K. Itagaki, Kazushige Horio

研究成果: Conference contribution

抜粋

Two-dimensional transient simulations of AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. It is shown that lag phenomena and current slump could be reproduced. Particularly, it is shown that gate lag is correlated with relatively high source access resistance of AlGaN/GaN HEMTs, and that drain lag could be a major cause of current slump. The current slump is more pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is concluded that an acceptor density in the buffer layer should be made low to minimize current slump, although current cutoff behavior may be degraded when the gate length is short.

元の言語English
ホスト出版物のタイトル2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007
出版者Springer-Verlag Wien
ページ265-268
ページ数4
出版物ステータスPublished - 2007
イベント12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 - Vienna
継続期間: 2007 9 252007 9 27

Other

Other12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007
Vienna
期間07/9/2507/9/27

    フィンガープリント

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Modelling and Simulation

これを引用

Nakajima, A., Itagaki, K., & Horio, K. (2007). Simulation of lag and current slump in AlGaN/GaN HEMTs as affected by buffer trapping. : 2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 (pp. 265-268). Springer-Verlag Wien.