We make 2-D transient simulations of field-plate AlGaN/GaN HEMTs with a semi-insulating buffer layer, where a deep acceptor above the midgap is considered. It is studied how the deep acceptor and the field plate affect lag phenomena and current collapse. It is shown that the drain lag and current collapse could be reduced by introducing a field plate, as in a case with a deep acceptor compensated by a deep donor in the buffer layer. This reduction occurs because electron trapping by the deep acceptors is weakened by the field plate. The dependence on the fieldplate length and the insulator thickness under the field plate is also studied, showing that the rates of lags and current collapse are quantitatively similar between the two cases with different types of buffer layers when the deep-acceptor density in the buffer layer is the same.
|ホスト出版物のタイトル||Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016|
|出版ステータス||Published - 2016|
|イベント||10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 19th Annual Nanotech Conference and Expo, and the 2016 National SBIR/STTR Conference - Washington, United States|
継続期間: 2016 5 22 → 2016 5 25
|Other||10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 19th Annual Nanotech Conference and Expo, and the 2016 National SBIR/STTR Conference|
|Period||16/5/22 → 16/5/25|
ASJC Scopus subject areas