Simulation of lags and current collapse in field-plate AlGaN/GaN HEMTs with different types of buffer layers

R. Tsurumaki, N. Noda, Kazushige Horio

研究成果: Conference contribution

抄録

We make 2-D transient simulations of field-plate AlGaN/GaN HEMTs with a semi-insulating buffer layer, where a deep acceptor above the midgap is considered. It is studied how the deep acceptor and the field plate affect lag phenomena and current collapse. It is shown that the drain lag and current collapse could be reduced by introducing a field plate, as in a case with a deep acceptor compensated by a deep donor in the buffer layer. This reduction occurs because electron trapping by the deep acceptors is weakened by the field plate. The dependence on the fieldplate length and the insulator thickness under the field plate is also studied, showing that the rates of lags and current collapse are quantitatively similar between the two cases with different types of buffer layers when the deep-acceptor density in the buffer layer is the same.

本文言語English
ホスト出版物のタイトルAdvanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016
出版社TechConnect
ページ121-124
ページ数4
4
ISBN(電子版)9780997511734
出版ステータスPublished - 2016
イベント10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 19th Annual Nanotech Conference and Expo, and the 2016 National SBIR/STTR Conference - Washington, United States
継続期間: 2016 5 222016 5 25

Other

Other10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 19th Annual Nanotech Conference and Expo, and the 2016 National SBIR/STTR Conference
国/地域United States
CityWashington
Period16/5/2216/5/25

ASJC Scopus subject areas

  • 流体および伝熱
  • バイオテクノロジー
  • 表面、皮膜および薄膜
  • 燃料技術

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