Simulation of lags and current collapse in field-plate AlGaN/GaN HEMTs with different types of buffer layers

R. Tsurumaki, N. Noda, Kazushige Horio

研究成果: Conference contribution

抄録

We make 2-D transient simulations of field-plate AlGaN/GaN HEMTs with a semi-insulating buffer layer, where a deep acceptor above the midgap is considered. It is studied how the deep acceptor and the field plate affect lag phenomena and current collapse. It is shown that the drain lag and current collapse could be reduced by introducing a field plate, as in a case with a deep acceptor compensated by a deep donor in the buffer layer. This reduction occurs because electron trapping by the deep acceptors is weakened by the field plate. The dependence on the fieldplate length and the insulator thickness under the field plate is also studied, showing that the rates of lags and current collapse are quantitatively similar between the two cases with different types of buffer layers when the deep-acceptor density in the buffer layer is the same.

元の言語English
ホスト出版物のタイトルAdvanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016
出版者TechConnect
ページ121-124
ページ数4
4
ISBN(電子版)9780997511734
出版物ステータスPublished - 2016
イベント10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 19th Annual Nanotech Conference and Expo, and the 2016 National SBIR/STTR Conference - Washington, United States
継続期間: 2016 5 222016 5 25

Other

Other10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 19th Annual Nanotech Conference and Expo, and the 2016 National SBIR/STTR Conference
United States
Washington
期間16/5/2216/5/25

Fingerprint

High electron mobility transistors
Buffer layers
aluminum gallium nitride
Electrons

ASJC Scopus subject areas

  • Fluid Flow and Transfer Processes
  • Biotechnology
  • Surfaces, Coatings and Films
  • Fuel Technology

これを引用

Tsurumaki, R., Noda, N., & Horio, K. (2016). Simulation of lags and current collapse in field-plate AlGaN/GaN HEMTs with different types of buffer layers. : Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016 (巻 4, pp. 121-124). TechConnect.

Simulation of lags and current collapse in field-plate AlGaN/GaN HEMTs with different types of buffer layers. / Tsurumaki, R.; Noda, N.; Horio, Kazushige.

Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016. 巻 4 TechConnect, 2016. p. 121-124.

研究成果: Conference contribution

Tsurumaki, R, Noda, N & Horio, K 2016, Simulation of lags and current collapse in field-plate AlGaN/GaN HEMTs with different types of buffer layers. : Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016. 巻. 4, TechConnect, pp. 121-124, 10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 19th Annual Nanotech Conference and Expo, and the 2016 National SBIR/STTR Conference, Washington, United States, 16/5/22.
Tsurumaki R, Noda N, Horio K. Simulation of lags and current collapse in field-plate AlGaN/GaN HEMTs with different types of buffer layers. : Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016. 巻 4. TechConnect. 2016. p. 121-124
Tsurumaki, R. ; Noda, N. ; Horio, Kazushige. / Simulation of lags and current collapse in field-plate AlGaN/GaN HEMTs with different types of buffer layers. Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016. 巻 4 TechConnect, 2016. pp. 121-124
@inproceedings{ee6dc1e7b31a415ab3493ed01c539c41,
title = "Simulation of lags and current collapse in field-plate AlGaN/GaN HEMTs with different types of buffer layers",
abstract = "We make 2-D transient simulations of field-plate AlGaN/GaN HEMTs with a semi-insulating buffer layer, where a deep acceptor above the midgap is considered. It is studied how the deep acceptor and the field plate affect lag phenomena and current collapse. It is shown that the drain lag and current collapse could be reduced by introducing a field plate, as in a case with a deep acceptor compensated by a deep donor in the buffer layer. This reduction occurs because electron trapping by the deep acceptors is weakened by the field plate. The dependence on the fieldplate length and the insulator thickness under the field plate is also studied, showing that the rates of lags and current collapse are quantitatively similar between the two cases with different types of buffer layers when the deep-acceptor density in the buffer layer is the same.",
keywords = "Current collapse, Deep acceptor, Field plate, GaN, HEMT",
author = "R. Tsurumaki and N. Noda and Kazushige Horio",
year = "2016",
language = "English",
volume = "4",
pages = "121--124",
booktitle = "Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016",
publisher = "TechConnect",

}

TY - GEN

T1 - Simulation of lags and current collapse in field-plate AlGaN/GaN HEMTs with different types of buffer layers

AU - Tsurumaki, R.

AU - Noda, N.

AU - Horio, Kazushige

PY - 2016

Y1 - 2016

N2 - We make 2-D transient simulations of field-plate AlGaN/GaN HEMTs with a semi-insulating buffer layer, where a deep acceptor above the midgap is considered. It is studied how the deep acceptor and the field plate affect lag phenomena and current collapse. It is shown that the drain lag and current collapse could be reduced by introducing a field plate, as in a case with a deep acceptor compensated by a deep donor in the buffer layer. This reduction occurs because electron trapping by the deep acceptors is weakened by the field plate. The dependence on the fieldplate length and the insulator thickness under the field plate is also studied, showing that the rates of lags and current collapse are quantitatively similar between the two cases with different types of buffer layers when the deep-acceptor density in the buffer layer is the same.

AB - We make 2-D transient simulations of field-plate AlGaN/GaN HEMTs with a semi-insulating buffer layer, where a deep acceptor above the midgap is considered. It is studied how the deep acceptor and the field plate affect lag phenomena and current collapse. It is shown that the drain lag and current collapse could be reduced by introducing a field plate, as in a case with a deep acceptor compensated by a deep donor in the buffer layer. This reduction occurs because electron trapping by the deep acceptors is weakened by the field plate. The dependence on the fieldplate length and the insulator thickness under the field plate is also studied, showing that the rates of lags and current collapse are quantitatively similar between the two cases with different types of buffer layers when the deep-acceptor density in the buffer layer is the same.

KW - Current collapse

KW - Deep acceptor

KW - Field plate

KW - GaN

KW - HEMT

UR - http://www.scopus.com/inward/record.url?scp=84988959359&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84988959359&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84988959359

VL - 4

SP - 121

EP - 124

BT - Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016

PB - TechConnect

ER -