Simulation of lags and current collapse in field-plate AlGaN/GaN HEMTs with deep acceptors in a buffer layer

N. Noda, Kazushige Horio

研究成果: Conference contribution

抜粋

We make 2-D transient simulations of field-plate AlGaN/GaN HEMTs with a semi-insulating buffer layer, where a deep acceptor above the midgap is considered. It is studied how the deep acceptor and the field plate affect lag phenomena and current collapse. It is shown that the drain lag and current collapse could be reduced by introducing a field plate, as in a case with a deep acceptor compensated by a deep donor in the buffer layer. This reduction occurs because electron trapping by the deep acceptors is weakened by the field plate. The dependence on insulator thickness under the field plate is also studied, suggesting that there is an optimum thickness of insulator to minimize the current collapse of AlGaN/GaN HEMTs.

元の言語English
ホスト出版物のタイトルNSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015
出版者Taylor and Francis Inc.
ページ274-277
ページ数4
4
ISBN(電子版)9781498747301
出版物ステータスPublished - 2015
イベント10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference - Washington, United States
継続期間: 2015 6 142015 6 17

Other

Other10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference
United States
Washington
期間15/6/1415/6/17

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Fluid Flow and Transfer Processes
  • Biotechnology
  • Fuel Technology

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  • これを引用

    Noda, N., & Horio, K. (2015). Simulation of lags and current collapse in field-plate AlGaN/GaN HEMTs with deep acceptors in a buffer layer. : NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015 (巻 4, pp. 274-277). Taylor and Francis Inc..