Simulation of removal of surface-state-related lag and current slump in GaAs FETs

H. Hafiz, M. Kumeno, K. Horio

研究成果: Conference contribution

抄録

Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that drain lag and current slump due to surface states are reduced by introducing a field plate longer than the surface-state region. Dependence of lag phenomena and current slump on field-plate length and SiO 2 passivation layer thickness is also studied, indicating that the lags and current slump can be completely removed in some cases.

本文言語English
ホスト出版物のタイトルNanotechnology 2012
ホスト出版物のサブタイトルElectronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
ページ582-585
ページ数4
出版ステータスPublished - 2012 8 17
イベントNanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012 - Santa Clara, CA, United States
継続期間: 2012 6 182012 6 21

出版物シリーズ

名前Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012

Conference

ConferenceNanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012
CountryUnited States
CitySanta Clara, CA
Period12/6/1812/6/21

ASJC Scopus subject areas

  • Ceramics and Composites
  • Surfaces, Coatings and Films

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