Simulation of surface and buffer trapping effects on gate lag in AlGaN/GaN HEMTs

Kazushige Horio, A. Nakajima, K. Fujii

研究成果: Conference contribution

抄録

Two-dimensional analysis of turn-on characteristics of AlGaN/GaN HEMTs is performed in which both buffer traps and surface states (traps) are considered. It is studied how so-called gate lag is affected by these traps. It is shown that gate lag due to buffer traps can occur because in the off state, electrons are injected into the buffer layer and captured by the traps. It is also shown that gate lag due to an electron-trap-type surface state can occur only when electron's gate tunneling is considered. Dependence of gate lag on buffer-trap parameters is also studied.

元の言語English
ホスト出版物のタイトルNanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010
ページ693-696
ページ数4
2
出版物ステータスPublished - 2010
イベントNanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010 - Anaheim, CA
継続期間: 2010 6 212010 6 24

Other

OtherNanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010
Anaheim, CA
期間10/6/2110/6/24

Fingerprint

Surface states
High electron mobility transistors
Electron traps
Electron tunneling
Buffer layers
Electron energy levels
Electrons

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

これを引用

Horio, K., Nakajima, A., & Fujii, K. (2010). Simulation of surface and buffer trapping effects on gate lag in AlGaN/GaN HEMTs. : Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010 (巻 2, pp. 693-696)

Simulation of surface and buffer trapping effects on gate lag in AlGaN/GaN HEMTs. / Horio, Kazushige; Nakajima, A.; Fujii, K.

Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010. 巻 2 2010. p. 693-696.

研究成果: Conference contribution

Horio, K, Nakajima, A & Fujii, K 2010, Simulation of surface and buffer trapping effects on gate lag in AlGaN/GaN HEMTs. : Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010. 巻. 2, pp. 693-696, Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010, Anaheim, CA, 10/6/21.
Horio K, Nakajima A, Fujii K. Simulation of surface and buffer trapping effects on gate lag in AlGaN/GaN HEMTs. : Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010. 巻 2. 2010. p. 693-696
Horio, Kazushige ; Nakajima, A. ; Fujii, K. / Simulation of surface and buffer trapping effects on gate lag in AlGaN/GaN HEMTs. Nanotechnology 2010: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - Technical Proceedings of the 2010 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2010. 巻 2 2010. pp. 693-696
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