Simulations of trapping effects in GaAs MESFETs and requirements for substrates in MESFET-ICs

Kazushige Horio, Yasuji Fuseya

研究成果: Conference contribution

抄録

Drain-current transients of GaAs MESFETs are simulated in the range from 10-13 to 102 sec. The currents become constant temporarily at around t = 10-11 sec, but begin to decrease or increase after some periods, reaching real steady-state values. The slow transients are attributed to trapping and detrapping by deep levels in the substrate. Effects of introducing a p-buffer layer on drain-current drifts and small-signal parameters are also studied. It is concluded that the use of a low trap-density substrate combined with introducing a p-buffer layer is effective to utilize high-speed and high-frequency performances of GaAs MESFETs.

本文言語English
ホスト出版物のタイトルGaAs IC Symposium Technical Digest 1992
出版社Institute of Electrical and Electronics Engineers Inc.
ページ241-244
ページ数4
ISBN(電子版)0780307739, 9780780307735
DOI
出版ステータスPublished - 1992 1 1
イベント14th Annual IEEE Gallium Arsenide Integrated Circuit Symposium, GaAs IC 1992 - Miami Beach, United States
継続期間: 1997 10 41997 10 7

出版物シリーズ

名前GaAs IC Symposium Technical Digest 1992

Conference

Conference14th Annual IEEE Gallium Arsenide Integrated Circuit Symposium, GaAs IC 1992
CountryUnited States
CityMiami Beach
Period97/10/497/10/7

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

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