Simultaneous doping / etching (SDE) process of multilayer graphene on Ni for low resistance metallization

Kosuke Yokosawa, Tomoki Akimoto, Yuri Okada, Kazuyoshi Ueno

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

In order to form a multilayer graphene film of low resistance without transferring to the device, we have developed a simultaneous doping / etching (SDE) process to remove the Ni catalyst layer during MoCl5 intercalation doping to CVD-grown MLG on Ni catalyst. The obtained sheet resistance of the doped MLG (∼ 20 nm thick) was 40% lower than the MLG/Ni (∼ 320 nm) before the SDE process.

本文言語English
ホスト出版物のタイトル2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
出版社Institute of Electrical and Electronics Engineers Inc.
ページ47-49
ページ数3
ISBN(電子版)9781538665084
DOI
出版ステータスPublished - 2019 3
イベント2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore
継続期間: 2019 3 122019 3 15

出版物シリーズ

名前2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
CountrySingapore
CitySingapore
Period19/3/1219/3/15

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Hardware and Architecture

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