Simultaneous doping / etching (SDE) process of multilayer graphene on Ni for low resistance metallization

Kosuke Yokosawa, Tomoki Akimoto, Yuri Okada, Kazuyoshi Ueno

研究成果: Conference contribution

抜粋

In order to form a multilayer graphene film of low resistance without transferring to the device, we have developed a simultaneous doping / etching (SDE) process to remove the Ni catalyst layer during MoCl5 intercalation doping to CVD-grown MLG on Ni catalyst. The obtained sheet resistance of the doped MLG (∼ 20 nm thick) was 40% lower than the MLG/Ni (∼ 320 nm) before the SDE process.

元の言語English
ホスト出版物のタイトル2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
出版者Institute of Electrical and Electronics Engineers Inc.
ページ47-49
ページ数3
ISBN(電子版)9781538665084
DOI
出版物ステータスPublished - 2019 3 1
イベント2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore
継続期間: 2019 3 122019 3 15

出版物シリーズ

氏名2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Singapore
Singapore
期間19/3/1219/3/15

    フィンガープリント

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Hardware and Architecture

これを引用

Yokosawa, K., Akimoto, T., Okada, Y., & Ueno, K. (2019). Simultaneous doping / etching (SDE) process of multilayer graphene on Ni for low resistance metallization. : 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (pp. 47-49). [8731211] (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2019.8731211