Single crystalline particles formation of InSb and GaSb III-V type semiconductor by using short drop tube process

Tadaharu Kawamura; Katsuhisa Nagayama

doi:10.2320/jinstmet.J2015022

Single crystalline particles formation of InSb and GaSb III-V type semiconductor by using short drop tube process

Tadaharu Kawamura, Katsuhisa Nagayama

研究成果: Article › 査読

4 被引用数 (Scopus)

抄録

In this study, we have investigated the single crystalline particle formation of InSb and GaSb 111-V type semiconductors by using the drop tube apparatus with a free fall length of 2.5 m. Microstructure and crystal orientation of the fine particle samples prepared by the drop tube process were measured by using SEM-EBSD. The samples were classified into two surface patterns: one is rough, the other is smooth. The sample with rough surface showed a polycrystalline structure, while the sample with smooth surface showed a single crystal formation.

本文言語	English
ページ（範囲）	419-421
ページ数	3
ジャーナル	Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
巻	79
号	8
DOI	https://doi.org/10.2320/jinstmet.J2015022
出版ステータス	Published - 2015 8月 1

ASJC Scopus subject areas

凝縮系物理学
材料力学
金属および合金
材料化学

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10.2320/jinstmet.J2015022

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abstract = "In this study, we have investigated the single crystalline particle formation of InSb and GaSb 111-V type semiconductors by using the drop tube apparatus with a free fall length of 2.5 m. Microstructure and crystal orientation of the fine particle samples prepared by the drop tube process were measured by using SEM-EBSD. The samples were classified into two surface patterns: one is rough, the other is smooth. The sample with rough surface showed a polycrystalline structure, while the sample with smooth surface showed a single crystal formation.",

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author = "Tadaharu Kawamura and Katsuhisa Nagayama",

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AU - Nagayama, Katsuhisa

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N2 - In this study, we have investigated the single crystalline particle formation of InSb and GaSb 111-V type semiconductors by using the drop tube apparatus with a free fall length of 2.5 m. Microstructure and crystal orientation of the fine particle samples prepared by the drop tube process were measured by using SEM-EBSD. The samples were classified into two surface patterns: one is rough, the other is smooth. The sample with rough surface showed a polycrystalline structure, while the sample with smooth surface showed a single crystal formation.

AB - In this study, we have investigated the single crystalline particle formation of InSb and GaSb 111-V type semiconductors by using the drop tube apparatus with a free fall length of 2.5 m. Microstructure and crystal orientation of the fine particle samples prepared by the drop tube process were measured by using SEM-EBSD. The samples were classified into two surface patterns: one is rough, the other is smooth. The sample with rough surface showed a polycrystalline structure, while the sample with smooth surface showed a single crystal formation.

KW - Containerless process

KW - Crystal orientation

KW - Melt growth

KW - Surface structure

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JO - Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals

JF - Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals

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Single crystalline particles formation of InSb and GaSb III-V type semiconductor by using short drop tube process

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