Single crystalline particles formation of InSb and GaSb III-V type semiconductor by using short drop tube process

Tadaharu Kawamura, Katsuhisa Nagayama

研究成果: Article査読

4 被引用数 (Scopus)

抄録

In this study, we have investigated the single crystalline particle formation of InSb and GaSb 111-V type semiconductors by using the drop tube apparatus with a free fall length of 2.5 m. Microstructure and crystal orientation of the fine particle samples prepared by the drop tube process were measured by using SEM-EBSD. The samples were classified into two surface patterns: one is rough, the other is smooth. The sample with rough surface showed a polycrystalline structure, while the sample with smooth surface showed a single crystal formation.

本文言語English
ページ(範囲)419-421
ページ数3
ジャーナルNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
79
8
DOI
出版ステータスPublished - 2015 8 1

ASJC Scopus subject areas

  • 凝縮系物理学
  • 材料力学
  • 金属および合金
  • 材料化学

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