Small-Signal Characteristics of n+-Ge Gate AlGaAs/GaAs MISFET's

Shuichi Fujita, Makoto Hirano, Takashi Mizutani

研究成果: Article査読

2 被引用数 (Scopus)

抄録

The small-signal characteristics of n+-Ge gate AlGaAs/ GaAs MISFET's have been clarified by S-parameter measurements and equivalent circuit modeling. A large intrinsic transconductance of 630 mS/mm and a maximum cutoff frequency fT of 70 GHz have been achieved for a MISFET with a gate length of 0.4 μm. The average electron drift velocity in the channel, evaluated from the fT was as high as 1.7 x 107 cm/s. In obtaining an equivalent circuit model, a gate conductance is introduced parallel to the gate-source capacitance in order to take into account the gate forward current of normally-off FET's. The gate conductance does not cause the fT of the MISFET to deteriorate due to a small gate forward current at a large gate bias, in contrast to GaAs MESFET's.

本文言語English
ページ(範囲)518-520
ページ数3
ジャーナルIEEE Electron Device Letters
9
10
DOI
出版ステータスPublished - 1988 10月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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