Solid-state synthesis of thermoelectric materials in Mg-Si-Ge system

Tatsuhiko Aizawa, Renbo Song, Atsushi Yamamoto

研究成果: Article査読

36 被引用数 (Scopus)

抄録

Solid solution Mg2Si1-xGex for various concentration of germanium, x, is successfully prepared in single phase by the bulk mechanical alloying (BMA) and the hot pressing (HP). Both BMA and HP process conditions were optimized to yield high dense samples with fine, homogeneous microstructure. The electrical conductivity, the Seebeck coefficient and the thermal conductivity are measured from room temperature up to about 700 K. The Seebeck coefficient is much sensitive to the germanium content, x in Mg2Si1-xGex. The pn-transition takes place at x = 0.35 where the Seebeck coefficient drastically changes its sign. The measured band gap of Mg2Si1-xGex decreases with x from 0.71 to 0.54 eV. The figure of merit at 613 K of Mg2Si 0.6Ge0.4 reaches 0.34 × 10-3 K -1 in the case of BMA for W = 600 and HP at 773 K by 1 GPa for 3.6 ks.

本文言語English
ページ(範囲)1490-1496
ページ数7
ジャーナルMaterials Transactions
46
7
DOI
出版ステータスPublished - 2005 7月
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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