Source of surface morphological defects formed on 4H-SiC homoepitaxial films

Tatsuya Okada, Kengo Ochi, Hiroyuki Kawahara, Takuro Tomita, Shigeki Matsuo, Makoto Yamaguchi, Kouichi Higashimine, Tsunenobu Kimoto

研究成果: Article査読

6 被引用数 (Scopus)

抄録

Plan-view transmission electron microscopy (TEM) was carried out to investigate the source of morphological defects formed on the surface of 4H-SiC homoepitaxial films. The source at the substrate/epifilm interface consisted of an inclusion and partial dislocations emerging from it. Selected-area diffraction pattern analysis, energy dispersive X-ray spectroscopy and micro-Raman spectroscopy revealed that the chemical composition of the inclusion was ZrO2- From the comparison between TEM images and calculated images, it was suggested that the partial dislocations were sheared Frank dislocations with the Burgers vector of the (1/12)(4403) type.

本文言語English
ページ(範囲)7625-7631
ページ数7
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
45
10 A
DOI
出版ステータスPublished - 2006 10 15
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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