Source of surface morphological defects formed on 4H-SiC homoepitaxial films

Tatsuya Okada, Kengo Ochi, Hiroyuki Kawahara, Takuro Tomita, Shigeki Matsuo, Makoto Yamaguchi, Kouichi Higashimine, Tsunenobu Kimoto

研究成果: Article

6 引用 (Scopus)

抄録

Plan-view transmission electron microscopy (TEM) was carried out to investigate the source of morphological defects formed on the surface of 4H-SiC homoepitaxial films. The source at the substrate/epifilm interface consisted of an inclusion and partial dislocations emerging from it. Selected-area diffraction pattern analysis, energy dispersive X-ray spectroscopy and micro-Raman spectroscopy revealed that the chemical composition of the inclusion was ZrO2- From the comparison between TEM images and calculated images, it was suggested that the partial dislocations were sheared Frank dislocations with the Burgers vector of the (1/12)(4403) type.

元の言語English
ページ(範囲)7625-7631
ページ数7
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
45
発行部数10 A
DOI
出版物ステータスPublished - 2006 10 15
外部発表Yes

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Surface defects
Dislocations (crystals)
Transmission electron microscopy
Burgers vector
defects
inclusions
Diffraction patterns
Raman spectroscopy
transmission electron microscopy
Defects
emerging
chemical composition
Substrates
diffraction patterns
Chemical analysis
spectroscopy
x rays
energy
X-Ray Emission Spectrometry

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

これを引用

Source of surface morphological defects formed on 4H-SiC homoepitaxial films. / Okada, Tatsuya; Ochi, Kengo; Kawahara, Hiroyuki; Tomita, Takuro; Matsuo, Shigeki; Yamaguchi, Makoto; Higashimine, Kouichi; Kimoto, Tsunenobu.

:: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 巻 45, 番号 10 A, 15.10.2006, p. 7625-7631.

研究成果: Article

Okada, Tatsuya ; Ochi, Kengo ; Kawahara, Hiroyuki ; Tomita, Takuro ; Matsuo, Shigeki ; Yamaguchi, Makoto ; Higashimine, Kouichi ; Kimoto, Tsunenobu. / Source of surface morphological defects formed on 4H-SiC homoepitaxial films. :: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2006 ; 巻 45, 番号 10 A. pp. 7625-7631.
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AU - Kawahara, Hiroyuki

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AU - Matsuo, Shigeki

AU - Yamaguchi, Makoto

AU - Higashimine, Kouichi

AU - Kimoto, Tsunenobu

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KW - Homoepitaxial film

KW - micro-Raman spectroscopy

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KW - Silicon carbide (SiC)

KW - Surface morphological defect

KW - Transmission electron microscopy (TEM)

KW - Zirconia (ZrO) inclusion

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