Source of surface morphological defects formed on 4H-SiC homoepitaxial films
Tatsuya Okada, Kengo Ochi, Hiroyuki Kawahara, Takuro Tomita, Shigeki Matsuo, Makoto Yamaguchi, Kouichi Higashimine, Tsunenobu Kimoto
研究成果: Article › 査読
6
被引用数
(Scopus)