Spatially dependent response of thick and large area p-i-n diode for ASTRO-E hard X-ray detector

M. Sugiho; T. Kamae; K. Makishima; T. Takahashi; T. Murakami; M. Tashiro; Y. Fukazawa; N. Iyomoto; H. Ozawa; A. Kubota; K. Nakazawa; K. Yamaoka; M. Kokubun; N. Ota; C. Tanihata; N. Isobe; Y. Terada; Y. Matsumoto; Y. Uchiyama; D. Yonetoku; I. Takahashi; J. Kotoku; S. Watanabe; Y. Ezoe

doi:10.1109/23.940093

Spatially dependent response of thick and large area p-i-n diode for ASTRO-E hard X-ray detector

M. Sugiho, T. Kamae, K. Makishima, T. Takahashi, T. Murakami, M. Tashiro, Y. Fukazawa, N. Iyomoto, H. Ozawa, A. Kubota, K. Nakazawa, K. Yamaoka, M. Kokubun, N. Ota, C. Tanihata, N. Isobe, Y. Terada, Y. Matsumoto, Y. Uchiyama, D. YonetokuI. Takahashi, J. Kotoku, S. Watanabe, Y. Ezoe

研究成果 › 査読

16 被引用数 (Scopus)

抄録

The ASTRO-E hard X-ray detector utilizes GSO(Gd₂SiO⁵:Ce 0.5% mol)-BGO(Bi₄Ge₃O₁₂) well-type phoswich counters [1] in compound-eye configuration to achieve an extremely low background level of about a few times 10^-5 counts s^-1 cm^-2 keV^-1. The GSO scintillators placed at the bottom of the BGO well observe photons in the energy range 30-600 keV. To cover the lower energy range of 10-60 keV, silicon p-i-n diodes of 2 mm in thickness and 21.5×21.5 mm² in size were newly developed and placed in front of the GSO scintillators. The p-i-n diode exhibits complex spectral responses, including subpeak and low energy tail components. To examine the origin of these components, we measured the spatially resolved response of the p-i-n diode and confirmed that the subpeak and the low energy tail are related to the electrode structures and electric fields in the p-i-n diode, respectively.

本文言語	English
ページ（範囲）	426-429
ページ数	4
ジャーナル	IEEE Transactions on Nuclear Science
巻	48
号	3 I
DOI	https://doi.org/10.1109/23.940093
出版ステータス	Published - 2001 6月
外部発表	はい
イベント	2000 Nuclear Science Symphosium (NSS) - Lyon, France 継続期間: 2000 10月 15 → 2000 10月 20

ASJC Scopus subject areas

核物理学および高エネルギー物理学
原子力エネルギーおよび原子力工学
電子工学および電気工学

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Sugiho, M., Kamae, T., Makishima, K., Takahashi, T., Murakami, T., Tashiro, M., Fukazawa, Y., Iyomoto, N., Ozawa, H., Kubota, A., Nakazawa, K., Yamaoka, K., Kokubun, M., Ota, N., Tanihata, C., Isobe, N., Terada, Y., Matsumoto, Y., Uchiyama, Y., ... Ezoe, Y. (2001). Spatially dependent response of thick and large area p-i-n diode for ASTRO-E hard X-ray detector. IEEE Transactions on Nuclear Science, 48(3 I), 426-429. https://doi.org/10.1109/23.940093

Sugiho, M, Kamae, T, Makishima, K, Takahashi, T, Murakami, T, Tashiro, M, Fukazawa, Y, Iyomoto, N, Ozawa, H, Kubota, A, Nakazawa, K, Yamaoka, K, Kokubun, M, Ota, N, Tanihata, C, Isobe, N, Terada, Y, Matsumoto, Y, Uchiyama, Y, Yonetoku, D, Takahashi, I, Kotoku, J, Watanabe, S & Ezoe, Y 2001, 'Spatially dependent response of thick and large area p-i-n diode for ASTRO-E hard X-ray detector', IEEE Transactions on Nuclear Science, vol. 48, no. 3 I, pp. 426-429. https://doi.org/10.1109/23.940093

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title = "Spatially dependent response of thick and large area p-i-n diode for ASTRO-E hard X-ray detector",

abstract = "The ASTRO-E hard X-ray detector utilizes GSO(Gd2SiO5:Ce 0.5% mol)-BGO(Bi4Ge3O12) well-type phoswich counters [1] in compound-eye configuration to achieve an extremely low background level of about a few times 10-5 counts s-1 cm-2 keV-1. The GSO scintillators placed at the bottom of the BGO well observe photons in the energy range 30-600 keV. To cover the lower energy range of 10-60 keV, silicon p-i-n diodes of 2 mm in thickness and 21.5×21.5 mm2 in size were newly developed and placed in front of the GSO scintillators. The p-i-n diode exhibits complex spectral responses, including subpeak and low energy tail components. To examine the origin of these components, we measured the spatially resolved response of the p-i-n diode and confirmed that the subpeak and the low energy tail are related to the electrode structures and electric fields in the p-i-n diode, respectively.",

keywords = "ASTRO-E, Hard X-ray detector, P-i-n silicon diode, Spectral response",

author = "M. Sugiho and T. Kamae and K. Makishima and T. Takahashi and T. Murakami and M. Tashiro and Y. Fukazawa and N. Iyomoto and H. Ozawa and A. Kubota and K. Nakazawa and K. Yamaoka and M. Kokubun and N. Ota and C. Tanihata and N. Isobe and Y. Terada and Y. Matsumoto and Y. Uchiyama and D. Yonetoku and I. Takahashi and J. Kotoku and S. Watanabe and Y. Ezoe",

year = "2001",

month = jun,

doi = "10.1109/23.940093",

language = "English",

volume = "48",

pages = "426--429",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

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note = "2000 Nuclear Science Symphosium (NSS) ; Conference date: 15-10-2000 Through 20-10-2000",

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T1 - Spatially dependent response of thick and large area p-i-n diode for ASTRO-E hard X-ray detector

AU - Sugiho, M.

AU - Kamae, T.

AU - Makishima, K.

AU - Takahashi, T.

AU - Murakami, T.

AU - Tashiro, M.

AU - Fukazawa, Y.

AU - Iyomoto, N.

AU - Ozawa, H.

AU - Kubota, A.

AU - Nakazawa, K.

AU - Yamaoka, K.

AU - Kokubun, M.

AU - Ota, N.

AU - Tanihata, C.

AU - Isobe, N.

AU - Terada, Y.

AU - Matsumoto, Y.

AU - Uchiyama, Y.

AU - Yonetoku, D.

AU - Takahashi, I.

AU - Kotoku, J.

AU - Watanabe, S.

AU - Ezoe, Y.

PY - 2001/6

Y1 - 2001/6

N2 - The ASTRO-E hard X-ray detector utilizes GSO(Gd2SiO5:Ce 0.5% mol)-BGO(Bi4Ge3O12) well-type phoswich counters [1] in compound-eye configuration to achieve an extremely low background level of about a few times 10-5 counts s-1 cm-2 keV-1. The GSO scintillators placed at the bottom of the BGO well observe photons in the energy range 30-600 keV. To cover the lower energy range of 10-60 keV, silicon p-i-n diodes of 2 mm in thickness and 21.5×21.5 mm2 in size were newly developed and placed in front of the GSO scintillators. The p-i-n diode exhibits complex spectral responses, including subpeak and low energy tail components. To examine the origin of these components, we measured the spatially resolved response of the p-i-n diode and confirmed that the subpeak and the low energy tail are related to the electrode structures and electric fields in the p-i-n diode, respectively.

AB - The ASTRO-E hard X-ray detector utilizes GSO(Gd2SiO5:Ce 0.5% mol)-BGO(Bi4Ge3O12) well-type phoswich counters [1] in compound-eye configuration to achieve an extremely low background level of about a few times 10-5 counts s-1 cm-2 keV-1. The GSO scintillators placed at the bottom of the BGO well observe photons in the energy range 30-600 keV. To cover the lower energy range of 10-60 keV, silicon p-i-n diodes of 2 mm in thickness and 21.5×21.5 mm2 in size were newly developed and placed in front of the GSO scintillators. The p-i-n diode exhibits complex spectral responses, including subpeak and low energy tail components. To examine the origin of these components, we measured the spatially resolved response of the p-i-n diode and confirmed that the subpeak and the low energy tail are related to the electrode structures and electric fields in the p-i-n diode, respectively.

KW - ASTRO-E

KW - Hard X-ray detector

KW - P-i-n silicon diode

KW - Spectral response

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JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 3 I

T2 - 2000 Nuclear Science Symphosium (NSS)

Y2 - 15 October 2000 through 20 October 2000

ER -

Spatially dependent response of thick and large area p-i-n diode for ASTRO-E hard X-ray detector

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