Spatially dependent response of thick and large area p-i-n diode for ASTRO-E hard X-ray detector

M. Sugiho, T. Kamae, K. Makishima, T. Takahashi, T. Murakami, M. Tashiro, Y. Fukazawa, N. Iyomoto, H. Ozawa, A. Kubota, K. Nakazawa, K. Yamaoka, M. Kokubun, N. Ota, C. Tanihata, N. Isobe, Y. Terada, Y. Matsumoto, Y. Uchiyama, D. YonetokuI. Takahashi, J. Kotoku, S. Watanabe, Y. Ezoe

研究成果: Conference article査読

16 被引用数 (Scopus)

抄録

The ASTRO-E hard X-ray detector utilizes GSO(Gd2SiO5:Ce 0.5% mol)-BGO(Bi4Ge3O12) well-type phoswich counters [1] in compound-eye configuration to achieve an extremely low background level of about a few times 10-5 counts s-1 cm-2 keV-1. The GSO scintillators placed at the bottom of the BGO well observe photons in the energy range 30-600 keV. To cover the lower energy range of 10-60 keV, silicon p-i-n diodes of 2 mm in thickness and 21.5×21.5 mm2 in size were newly developed and placed in front of the GSO scintillators. The p-i-n diode exhibits complex spectral responses, including subpeak and low energy tail components. To examine the origin of these components, we measured the spatially resolved response of the p-i-n diode and confirmed that the subpeak and the low energy tail are related to the electrode structures and electric fields in the p-i-n diode, respectively.

本文言語English
ページ(範囲)426-429
ページ数4
ジャーナルIEEE Transactions on Nuclear Science
48
3 I
DOI
出版ステータスPublished - 2001 6
外部発表はい
イベント2000 Nuclear Science Symphosium (NSS) - Lyon, France
継続期間: 2000 10 152000 10 20

ASJC Scopus subject areas

  • 核物理学および高エネルギー物理学
  • 原子力エネルギーおよび原子力工学
  • 電子工学および電気工学

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