Spatially dependent response of thick and large area PIN diode developed for ASTRO-E hard x-ray detector

M. Sugiho, T. Kamae, K. Makishima, T. Takahashi, T. Murakami, M. Tashiro, Y. Fukazawa, M. Kaneda, T. Tamura, N. Iyomoto, M. Sugizaki, H. Ozawa, A. Kubota, K. Nakazawa, K. Yamaoka, M. Kokubun, N. Ota, C. Tanihata, N. Isobe, S. KuboY. Terada, Y. Matsumoto, Y. Uchiyama, D. Yonetoku, I. Takahashi, J. Kotoku, S. Watanabe, Y. Ezoe

研究成果査読

抄録

The ASTRO-E Hard X-ray Detector utilizes GSO/BGO well-type phoswich counters in compound-eye configuration, to achieve an extremely low background level of about a few times 10-5 counts s-1 cm-2 keV-1. The GSO scintillators placed at the bottom of the BGO well observe photons in the energy range 30-600 keV. To cover the lower energy range of 10-60 keV, silicon PIN diodes of 2 mm in thickness and 21.5 × 21.5mm2 in size were newly developed, and placed in front of the GSO scintillators. The PIN diode exhibits complex spectral responses, including subpeak and low energy tail components. To examine the origin of these components, we measured spatially-resolved response of the PIN diode, and confirmed that the subpeak and the low energy tail are related to the electrode structures and electric fields in the PIN diode, respectively.

本文言語English
ページ7/66-7/70
出版ステータスPublished - 2000
外部発表はい
イベント2000 IEEE Nuclear Science Symposium Conference Record - Lyon, France
継続期間: 2000 10 152000 10 20

Conference

Conference2000 IEEE Nuclear Science Symposium Conference Record
国/地域France
CityLyon
Period00/10/1500/10/20

ASJC Scopus subject areas

  • 放射線
  • 核物理学および高エネルギー物理学
  • 放射線学、核医学およびイメージング

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