Spectroscopic ellipsometry study of In 2O 3 thin films

L. Miao, S. Tanemura, Y. G. Cao, G. Xu

研究成果: Article査読

13 被引用数 (Scopus)

抄録

In 2O 3 films grown by helicon magnetron sputtering with different thicknesses were characterized by spectroscopic ellipsometry in the energy range from 1.5 to 5.0 eV. Aside from one amorphous sample prepared at room substrate temperature, polycrystalline In 2O 3 films with cubic crystal structure were confirmed for other four samples prepared at the substrate temperature of 450 °C. Excellent SE fittings were realized by applying 1 and/or 2 terms F&B amorphous formulations, building double layered film configuration models, and further taking account of void into the surface layer based on Bruggeman effective medium approximation for thinner films. Spectral dependent refractive indices and extinction coefficients were obtained for five samples. The curve shapes were well interpreted according to the applied dispersion formulas. Almost similar optical band gap values from 3.76 to 3.84 eV were obtained for five samples by Taue plot calculation using extinction coefficients under the assumption of direct allowed optical transition mode.

本文言語English
ページ(範囲)S71-S75
ジャーナルJournal of Materials Science: Materials in Electronics
20
SUPPL. 1
DOI
出版ステータスPublished - 2009 1月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学
  • 電子工学および電気工学

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