TY - JOUR
T1 - Sputter Deposition and Characterization of Sm-Doped Pb(Mg1/3, Nb2/3)O-PbTiO Epitaxial Thin Film on Si Toward Giant-Piezoelectric Thin Film for MEMS Actuator Application
AU - Qi, Xuanmeng
AU - Yoshida, Shinya
AU - Tanaka, Shuji
N1 - Publisher Copyright:
© 1986-2012 IEEE.
PY - 2022/5/1
Y1 - 2022/5/1
N2 - To meet the growing demand for better piezoelectric thin films for microelectromechanical systems (MEMSs), we have developed an SM-doped Pb(Mg1/3, Nb2/3)O3-PbTiO3 (Sm-PMN-PT) epitaxial thin film as a next-generation piezoelectric thin film to replace Pb(Zr, Ti)O3 (PZT). The inherent piezoelectricity $\left |{ {e}_{{31},{f}} }\right |$ achieved 20 C/m2, which is greater than those of intrinsic PZT thin films and the best Nb-doped PZT thin film. Besides, the simulation results show that the $\left |{ {e}_{{31},{f}} }\right |$ value of the single Sm-PMN-PT film could be around 26 C/m2. Meanwhile, the breakdown voltage of the as-deposited thin film was higher than 300 kV/cm. These results suggest the high potential of the Sm-PMN-PT epitaxial thin film for piezo-MEMS actuators with large displacement or force.
AB - To meet the growing demand for better piezoelectric thin films for microelectromechanical systems (MEMSs), we have developed an SM-doped Pb(Mg1/3, Nb2/3)O3-PbTiO3 (Sm-PMN-PT) epitaxial thin film as a next-generation piezoelectric thin film to replace Pb(Zr, Ti)O3 (PZT). The inherent piezoelectricity $\left |{ {e}_{{31},{f}} }\right |$ achieved 20 C/m2, which is greater than those of intrinsic PZT thin films and the best Nb-doped PZT thin film. Besides, the simulation results show that the $\left |{ {e}_{{31},{f}} }\right |$ value of the single Sm-PMN-PT film could be around 26 C/m2. Meanwhile, the breakdown voltage of the as-deposited thin film was higher than 300 kV/cm. These results suggest the high potential of the Sm-PMN-PT epitaxial thin film for piezo-MEMS actuators with large displacement or force.
KW - Microelectromechanical systems (MEMSs)
KW - Sm-PMN-PT
KW - piezoelectric MEMS actuator
KW - relaxor-based ferroelectric thin film
KW - transverse piezoelectric coefficient
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UR - http://www.scopus.com/inward/citedby.url?scp=85126318574&partnerID=8YFLogxK
U2 - 10.1109/TUFFC.2022.3156881
DO - 10.1109/TUFFC.2022.3156881
M3 - Article
C2 - 35259100
AN - SCOPUS:85126318574
VL - 69
SP - 1821
EP - 1828
JO - Transactions of the IRE Professional Group on Ultrasonic Engineering
JF - Transactions of the IRE Professional Group on Ultrasonic Engineering
SN - 0885-3010
IS - 5
ER -