Stabilization of impedance matching system using RF transformer

Kazuhiro Sugimoto, Mineo Watakabe, Masayuki Okuno, Tetsuya Homma

研究成果: Article

抄録

We have investigated a new dry ashing system for manufacturing of semiconductor devices. For this purpose, we have proposed a plasma system using RF transformer, which is essential to dry ashing, in order to maintain the plasma excitation. This RF transformer can achieve a balanced connection of inductive coil. This system also can improve the ashing uniformity, resulting in high capability for various plasma processing. From the measurement of antenna potential, the deviation of etching rate for balanced connection was reduced to 35%, as compared to that for the unbalanced connection, resulting in improvement of uniformity. By employing an impedance conversion method using RF transformer, the incident signal power can be supplied even though the 25 times higher load impedance than conventional plasma systems. As for the T-type impedance matching using RF transformer, the matching time was reduced to 0.2 s from 8 s for conventional L-type impedance matching system. Wide range impedance matching can be achieved by using T-type impedance matching system. It was confirmed that this system can achieve a stable plasma processing and reduction of ashing process step number, as well as reduction of power consumption and environmental load.

元の言語English
ページ(範囲)404-408
ページ数5
ジャーナルIEEJ Transactions on Fundamentals and Materials
136
発行部数7
DOI
出版物ステータスPublished - 2016

Fingerprint

Stabilization
Plasma applications
Plasmas
Semiconductor devices
Etching
Electric power utilization
Antennas

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

これを引用

Stabilization of impedance matching system using RF transformer. / Sugimoto, Kazuhiro; Watakabe, Mineo; Okuno, Masayuki; Homma, Tetsuya.

:: IEEJ Transactions on Fundamentals and Materials, 巻 136, 番号 7, 2016, p. 404-408.

研究成果: Article

Sugimoto, Kazuhiro ; Watakabe, Mineo ; Okuno, Masayuki ; Homma, Tetsuya. / Stabilization of impedance matching system using RF transformer. :: IEEJ Transactions on Fundamentals and Materials. 2016 ; 巻 136, 番号 7. pp. 404-408.
@article{315bb04c615f453f935251e137dc71d0,
title = "Stabilization of impedance matching system using RF transformer",
abstract = "We have investigated a new dry ashing system for manufacturing of semiconductor devices. For this purpose, we have proposed a plasma system using RF transformer, which is essential to dry ashing, in order to maintain the plasma excitation. This RF transformer can achieve a balanced connection of inductive coil. This system also can improve the ashing uniformity, resulting in high capability for various plasma processing. From the measurement of antenna potential, the deviation of etching rate for balanced connection was reduced to 35{\%}, as compared to that for the unbalanced connection, resulting in improvement of uniformity. By employing an impedance conversion method using RF transformer, the incident signal power can be supplied even though the 25 times higher load impedance than conventional plasma systems. As for the T-type impedance matching using RF transformer, the matching time was reduced to 0.2 s from 8 s for conventional L-type impedance matching system. Wide range impedance matching can be achieved by using T-type impedance matching system. It was confirmed that this system can achieve a stable plasma processing and reduction of ashing process step number, as well as reduction of power consumption and environmental load.",
keywords = "Impedance matching, Inductively coupled plasma, RF transformers",
author = "Kazuhiro Sugimoto and Mineo Watakabe and Masayuki Okuno and Tetsuya Homma",
year = "2016",
doi = "10.1541/ieejfms.136.404",
language = "English",
volume = "136",
pages = "404--408",
journal = "IEEJ Transactions on Fundamentals and Materials",
issn = "0385-4205",
publisher = "The Institute of Electrical Engineers of Japan",
number = "7",

}

TY - JOUR

T1 - Stabilization of impedance matching system using RF transformer

AU - Sugimoto, Kazuhiro

AU - Watakabe, Mineo

AU - Okuno, Masayuki

AU - Homma, Tetsuya

PY - 2016

Y1 - 2016

N2 - We have investigated a new dry ashing system for manufacturing of semiconductor devices. For this purpose, we have proposed a plasma system using RF transformer, which is essential to dry ashing, in order to maintain the plasma excitation. This RF transformer can achieve a balanced connection of inductive coil. This system also can improve the ashing uniformity, resulting in high capability for various plasma processing. From the measurement of antenna potential, the deviation of etching rate for balanced connection was reduced to 35%, as compared to that for the unbalanced connection, resulting in improvement of uniformity. By employing an impedance conversion method using RF transformer, the incident signal power can be supplied even though the 25 times higher load impedance than conventional plasma systems. As for the T-type impedance matching using RF transformer, the matching time was reduced to 0.2 s from 8 s for conventional L-type impedance matching system. Wide range impedance matching can be achieved by using T-type impedance matching system. It was confirmed that this system can achieve a stable plasma processing and reduction of ashing process step number, as well as reduction of power consumption and environmental load.

AB - We have investigated a new dry ashing system for manufacturing of semiconductor devices. For this purpose, we have proposed a plasma system using RF transformer, which is essential to dry ashing, in order to maintain the plasma excitation. This RF transformer can achieve a balanced connection of inductive coil. This system also can improve the ashing uniformity, resulting in high capability for various plasma processing. From the measurement of antenna potential, the deviation of etching rate for balanced connection was reduced to 35%, as compared to that for the unbalanced connection, resulting in improvement of uniformity. By employing an impedance conversion method using RF transformer, the incident signal power can be supplied even though the 25 times higher load impedance than conventional plasma systems. As for the T-type impedance matching using RF transformer, the matching time was reduced to 0.2 s from 8 s for conventional L-type impedance matching system. Wide range impedance matching can be achieved by using T-type impedance matching system. It was confirmed that this system can achieve a stable plasma processing and reduction of ashing process step number, as well as reduction of power consumption and environmental load.

KW - Impedance matching

KW - Inductively coupled plasma

KW - RF transformers

UR - http://www.scopus.com/inward/record.url?scp=84977120247&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84977120247&partnerID=8YFLogxK

U2 - 10.1541/ieejfms.136.404

DO - 10.1541/ieejfms.136.404

M3 - Article

AN - SCOPUS:84977120247

VL - 136

SP - 404

EP - 408

JO - IEEJ Transactions on Fundamentals and Materials

JF - IEEJ Transactions on Fundamentals and Materials

SN - 0385-4205

IS - 7

ER -