Stress Current Behavior of InAlAs/InGaAs and AlGaAs/GaAs HBT’s with Polyimide Passivation

Shin ichi Tanaka, Kensuke Kasahara, Hidenori Shimawaki, Kazuhiko Honjo

研究成果: Article査読

18 被引用数 (Scopus)

抄録

InAJAs/InGaAs and AlGaAs/GaAs HBT’s, with heavily Be-doped base layers, have been fabricated and their reliability under excessive forward current tested. To understand the HBT material difference, a common process based on a polyimide planarization process is applied to the fabrication. While short-term degradation induced by stress current is observed for AlGaAs/GaAs HBT’s (G-HBT’s), InAlAs/InGaAs HBT’s (I-HBT’s) are stable up to a current density of 1.5 X 10s A/cm2 indicating the absence of substantial Be diffusion. An analysis of base current has shown a striking contrast between the HBT’s in terms of the stressing effect on the surface recombination along emitter junction periphery.

本文言語English
ページ(範囲)560-562
ページ数3
ジャーナルIEEE Electron Device Letters
13
11
DOI
出版ステータスPublished - 1992 11月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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