抜粋
InAJAs/InGaAs and AlGaAs/GaAs HBT’s, with heavily Be-doped base layers, have been fabricated and their reliability under excessive forward current tested. To understand the HBT material difference, a common process based on a polyimide planarization process is applied to the fabrication. While short-term degradation induced by stress current is observed for AlGaAs/GaAs HBT’s (G-HBT’s), InAlAs/InGaAs HBT’s (I-HBT’s) are stable up to a current density of 1.5 X 10s A/cm2 indicating the absence of substantial Be diffusion. An analysis of base current has shown a striking contrast between the HBT’s in terms of the stressing effect on the surface recombination along emitter junction periphery.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 560-562 |
| ページ数 | 3 |
| ジャーナル | IEEE Electron Device Letters |
| 巻 | 13 |
| 発行部数 | 11 |
| DOI | |
| 出版物ステータス | Published - 1992 11 |
| 外部発表 | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
フィンガープリント Stress Current Behavior of InAlAs/InGaAs and AlGaAs/GaAs HBT’s with Polyimide Passivation' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。
これを引用
Tanaka, S. I., Kasahara, K., Shimawaki, H., & Honjo, K. (1992). Stress Current Behavior of InAlAs/InGaAs and AlGaAs/GaAs HBT’s with Polyimide Passivation. IEEE Electron Device Letters, 13(11), 560-562. https://doi.org/10.1109/55.192839