抄録
InAlAs/InGaAs and AlGaAs/GaAs HBTs, with heavily Be-doped base layers, have been fabricated and their reliability under excessive forward current tested. To understand the HBT material difference, a common process based on a polyimide planarization method is applied to the fabrication. While short-term degradation induced by stress current is observed for AlGaAs/GaAs HBTs, InAlAs/InGaAs HBTs are stable up to a current density of 1.5 × 105 A/cm2, indicating the absence of substantial Be diffusion. An analysis of base current has shown a striking contrast between the HBTs in terms of the stressing effect on the surface recombination along emitter junction periphery.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 560-562 |
| ページ数 | 3 |
| ジャーナル | IEEE Electron Device Letters |
| 巻 | 13 |
| 発行部数 | 11 |
| 出版物ステータス | Published - 1992 1 1 |
| 外部発表 | Yes |
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ASJC Scopus subject areas
- Engineering(all)
これを引用
Stress Current Behavior of InAlAs/InGaAs and AlGaAs/GaAs HBT's with Polyimide Passivation. / Tanaka, Shinichi; Kasahara, Kensuke; Shimawaki, Hidenori; Honjo, Kazuhiko.
：: IEEE Electron Device Letters, 巻 13, 番号 11, 01.01.1992, p. 560-562.研究成果: Article
}
TY - JOUR
T1 - Stress Current Behavior of InAlAs/InGaAs and AlGaAs/GaAs HBT's with Polyimide Passivation.
AU - Tanaka, Shinichi
AU - Kasahara, Kensuke
AU - Shimawaki, Hidenori
AU - Honjo, Kazuhiko
PY - 1992/1/1
Y1 - 1992/1/1
N2 - InAlAs/InGaAs and AlGaAs/GaAs HBTs, with heavily Be-doped base layers, have been fabricated and their reliability under excessive forward current tested. To understand the HBT material difference, a common process based on a polyimide planarization method is applied to the fabrication. While short-term degradation induced by stress current is observed for AlGaAs/GaAs HBTs, InAlAs/InGaAs HBTs are stable up to a current density of 1.5 × 105 A/cm2, indicating the absence of substantial Be diffusion. An analysis of base current has shown a striking contrast between the HBTs in terms of the stressing effect on the surface recombination along emitter junction periphery.
AB - InAlAs/InGaAs and AlGaAs/GaAs HBTs, with heavily Be-doped base layers, have been fabricated and their reliability under excessive forward current tested. To understand the HBT material difference, a common process based on a polyimide planarization method is applied to the fabrication. While short-term degradation induced by stress current is observed for AlGaAs/GaAs HBTs, InAlAs/InGaAs HBTs are stable up to a current density of 1.5 × 105 A/cm2, indicating the absence of substantial Be diffusion. An analysis of base current has shown a striking contrast between the HBTs in terms of the stressing effect on the surface recombination along emitter junction periphery.
UR - http://www.scopus.com/inward/record.url?scp=0026953114&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0026953114&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0026953114
VL - 13
SP - 560
EP - 562
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 11
ER -