抄録
InAJAs/InGaAs and AlGaAs/GaAs HBT’s, with heavily Be-doped base layers, have been fabricated and their reliability under excessive forward current tested. To understand the HBT material difference, a common process based on a polyimide planarization process is applied to the fabrication. While short-term degradation induced by stress current is observed for AlGaAs/GaAs HBT’s (G-HBT’s), InAlAs/InGaAs HBT’s (I-HBT’s) are stable up to a current density of 1.5 X 10s A/cm2 indicating the absence of substantial Be diffusion. An analysis of base current has shown a striking contrast between the HBT’s in terms of the stressing effect on the surface recombination along emitter junction periphery.
本文言語 | English |
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ページ(範囲) | 560-562 |
ページ数 | 3 |
ジャーナル | IEEE Electron Device Letters |
巻 | 13 |
号 | 11 |
DOI | |
出版ステータス | Published - 1992 11月 |
外部発表 | はい |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 電子工学および電気工学