Structural and electrical properties of HfLaOx films for an amorphous high-k gate insulator

Y. Yamamoto, K. Kita, K. Kyuno, A. Toriumi

研究成果: Article査読

145 被引用数 (Scopus)

抄録

Thin HfLaOx films on Si(100) have been investigated as an alternative gate insulator. The introduction of La2O3 into HfO2 causes an increase of crystallization temperature. Furthermore, unlike other Hf-based amorphous materials such as HfSiOx or HfAlOx, the permittivity of HfLaOx keeps a high value (>20). The capacitance-voltage curve of metal oxide semiconductor capacitor using the HfLaOx dielectric film has shown a negligible hysteresis and no frequency dispersion, indicating very small degradations of both interface and bulk properties. In addition, a very low fixed charge density in HfLaOx films is demonstrated from a very small film thickness dependence of the flatband voltage.

本文言語English
論文番号032903
ジャーナルApplied Physics Letters
89
3
DOI
出版ステータスPublished - 2006
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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