The presence of dislocations has been revealed by numerical processing of high-resolution transmission electron microscopy images from the regions affected by a shock wave propagation. The shock wave was triggered by a single 220 fs duration pulse of 30 nJ at an 800 nm wavelength inside sapphire at approximately 10 μm depth. The shock-amorphised sapphire has a distinct boundary with the crystalline phase, which is not wet etchable even at a dislocation density of e∼ 8×1012 cm-2.
|ジャーナル||Applied Physics A: Materials Science and Processing|
|出版ステータス||Published - 2007 2月|
ASJC Scopus subject areas
- 化学 (全般)