Structures of cornets in a homoepitaxially grown 4H-SiC film studied by DUV micro-Raman spectroscopy

Takuro Tomita; Shigeki Matsuo; Tatsuya Okada; Tsunenobu Kimoto; Takeshi Mitani; Shin Ichi Nakashima

Structures of cornets in a homoepitaxially grown 4H-SiC film studied by DUV micro-Raman spectroscopy

Takuro Tomita, Shigeki Matsuo, Tatsuya Okada, Tsunenobu Kimoto, Takeshi Mitani, Shin Ichi Nakashima

研究成果: Conference contribution

抄録

Deep-ultraviolet (DUV) micro-Raman spectroscopy was applied to study the micro structures of surface defects in a 4H-SiC homoepitaxially grown film. From DUV Raman spectrum, inclusions of 3C-SiC was found in comet defects. The shape of 3C-structure in comets was investigated and it was found that 3C inclusions in comets can be classified into two types. In addition, spectrum broadening due to the coupling of nonfolded longitudinal optical phonon mode and the photo-excited carriers was also found. The formation mechanisms of 3C inclusion in comets were discussed.

本文言語	English
ホスト出版物のタイトル	Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005
ページ	339-342
ページ数	4
版	PART 1
出版ステータス	Published - 2006 12月 1
外部発表	はい
イベント	International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States 継続期間: 2005 9月 18 → 2005 9月 23

出版物シリーズ

名前	Materials Science Forum
番号	PART 1
巻	527-529
ISSN（印刷版）	0255-5476

Conference

Conference	International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
国/地域	United States
City	Pittsburgh, PA
Period	05/9/18 → 05/9/23

ASJC Scopus subject areas

材料科学（全般）
凝縮系物理学
材料力学
機械工学

他のファイルとリンク

引用スタイル

Tomita, T., Matsuo, S., Okada, T., Kimoto, T., Mitani, T., & Nakashima, S. I. (2006). Structures of cornets in a homoepitaxially grown 4H-SiC film studied by DUV micro-Raman spectroscopy. In Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005 (PART 1 ed., pp. 339-342). (Materials Science Forum; Vol. 527-529, No. PART 1).

Structures of cornets in a homoepitaxially grown 4H-SiC film studied by DUV micro-Raman spectroscopy. / Tomita, Takuro; Matsuo, Shigeki; Okada, Tatsuya その他.

Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1. ed. 2006. p. 339-342 (Materials Science Forum; Vol. 527-529, No. PART 1).

研究成果: Conference contribution

Tomita, T, Matsuo, S, Okada, T, Kimoto, T, Mitani, T & Nakashima, SI 2006, Structures of cornets in a homoepitaxially grown 4H-SiC film studied by DUV micro-Raman spectroscopy. in Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 edn, Materials Science Forum, no. PART 1, vol. 527-529, pp. 339-342, International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005), Pittsburgh, PA, United States, 05/9/18.

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title = "Structures of cornets in a homoepitaxially grown 4H-SiC film studied by DUV micro-Raman spectroscopy",

abstract = "Deep-ultraviolet (DUV) micro-Raman spectroscopy was applied to study the micro structures of surface defects in a 4H-SiC homoepitaxially grown film. From DUV Raman spectrum, inclusions of 3C-SiC was found in comet defects. The shape of 3C-structure in comets was investigated and it was found that 3C inclusions in comets can be classified into two types. In addition, spectrum broadening due to the coupling of nonfolded longitudinal optical phonon mode and the photo-excited carriers was also found. The formation mechanisms of 3C inclusion in comets were discussed.",

keywords = "DUV-Raman spectroscopy, Homoepitaxially grown film, Surface defect",

author = "Takuro Tomita and Shigeki Matsuo and Tatsuya Okada and Tsunenobu Kimoto and Takeshi Mitani and Nakashima, {Shin Ichi}",

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AU - Okada, Tatsuya

AU - Kimoto, Tsunenobu

AU - Mitani, Takeshi

AU - Nakashima, Shin Ichi

PY - 2006/12/1

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N2 - Deep-ultraviolet (DUV) micro-Raman spectroscopy was applied to study the micro structures of surface defects in a 4H-SiC homoepitaxially grown film. From DUV Raman spectrum, inclusions of 3C-SiC was found in comet defects. The shape of 3C-structure in comets was investigated and it was found that 3C inclusions in comets can be classified into two types. In addition, spectrum broadening due to the coupling of nonfolded longitudinal optical phonon mode and the photo-excited carriers was also found. The formation mechanisms of 3C inclusion in comets were discussed.

AB - Deep-ultraviolet (DUV) micro-Raman spectroscopy was applied to study the micro structures of surface defects in a 4H-SiC homoepitaxially grown film. From DUV Raman spectrum, inclusions of 3C-SiC was found in comet defects. The shape of 3C-structure in comets was investigated and it was found that 3C inclusions in comets can be classified into two types. In addition, spectrum broadening due to the coupling of nonfolded longitudinal optical phonon mode and the photo-excited carriers was also found. The formation mechanisms of 3C inclusion in comets were discussed.

KW - DUV-Raman spectroscopy

KW - Homoepitaxially grown film

KW - Surface defect

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BT - Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005

T2 - International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)

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Structures of cornets in a homoepitaxially grown 4H-SiC film studied by DUV micro-Raman spectroscopy

抄録

出版物シリーズ

Conference

ASJC Scopus subject areas

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