TY - GEN
T1 - Structures of cornets in a homoepitaxially grown 4H-SiC film studied by DUV micro-Raman spectroscopy
AU - Tomita, Takuro
AU - Matsuo, Shigeki
AU - Okada, Tatsuya
AU - Kimoto, Tsunenobu
AU - Mitani, Takeshi
AU - Nakashima, Shin Ichi
PY - 2006/12/1
Y1 - 2006/12/1
N2 - Deep-ultraviolet (DUV) micro-Raman spectroscopy was applied to study the micro structures of surface defects in a 4H-SiC homoepitaxially grown film. From DUV Raman spectrum, inclusions of 3C-SiC was found in comet defects. The shape of 3C-structure in comets was investigated and it was found that 3C inclusions in comets can be classified into two types. In addition, spectrum broadening due to the coupling of nonfolded longitudinal optical phonon mode and the photo-excited carriers was also found. The formation mechanisms of 3C inclusion in comets were discussed.
AB - Deep-ultraviolet (DUV) micro-Raman spectroscopy was applied to study the micro structures of surface defects in a 4H-SiC homoepitaxially grown film. From DUV Raman spectrum, inclusions of 3C-SiC was found in comet defects. The shape of 3C-structure in comets was investigated and it was found that 3C inclusions in comets can be classified into two types. In addition, spectrum broadening due to the coupling of nonfolded longitudinal optical phonon mode and the photo-excited carriers was also found. The formation mechanisms of 3C inclusion in comets were discussed.
KW - DUV-Raman spectroscopy
KW - Homoepitaxially grown film
KW - Surface defect
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M3 - Conference contribution
AN - SCOPUS:37849040722
SN - 9780878494255
T3 - Materials Science Forum
SP - 339
EP - 342
BT - Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005
T2 - International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
Y2 - 18 September 2005 through 23 September 2005
ER -