Studies of AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Silicon Carbide and Sapphire Substrates

S. Arulkumaran, T. Egawa, H. Ishikawa, T. Jimbo

研究成果: Article › 査読

引用スタイル

@article{03e61e258e7d40e094d37311d52a2f1a,

title = "Studies of AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Silicon Carbide and Sapphire Substrates",

author = "S. Arulkumaran and T. Egawa and H. Ishikawa and T. Jimbo",

year = "2001",

month = sep,

day = "1",

language = "English",

pages = "C--1--2",

journal = "Default journal",

}