Studies of electron beam evaporated SiO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Subramaniam Arulkumaran, Takashi Egawa, Hiroyasu Ishikawa

研究成果: Article査読

26 被引用数 (Scopus)

抄録

The metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) have been demonstrated and its dc characteristics were examined and compared with the conventional AlGaN/GaN HEMTs. The electron beam (EB) evaporated SiO2 layers were used as a gate-insulator. Capacitance-voltage plot of MOS contacts revealed the existence of injection type complete accumulation up to +4.0 V. The fabricated MOSHEMTs have exhibited better dc characteristics when compared with the conventional AlGaN/GaN HEMTs. The MOSHEMTs could operate at positive gate-biases as high as +4.0 V. The 2.0-μm-gate-length EB-SiO 2 MOSHEMTs exhibited higher drain current density and extrinsic transconductance of 856 mA/ mm and 145 mS/mm when compared to the conventional AlGaN/GaN HEMTs. The gate leakage current (IgLeak) was three orders of magnitude lower than that of the conventional AlGaN/GaN HEMTs. The stable device operations at high operating voltages with low IgLeak and high gmmax values leads to the occurrence of low trap density at EB-SiO2/AlGaN interface.

本文言語English
ページ(範囲)L812-L815
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
44
24-27
DOI
出版ステータスPublished - 2005 6月 24
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

フィンガープリント

「Studies of electron beam evaporated SiO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル