Study of La-induced flat band voltage shift in metal/HfLaO x/SiO2/Si capacitors

Yoshiki Yamamoto; Koji Kita; Kentaro Kyuno; Akira Toriumi

doi:10.1143/JJAP.46.7251

Study of La-induced flat band voltage shift in metal/HfLaO _x/SiO₂/Si capacitors

Yoshiki Yamamoto, Koji Kita, Kentaro Kyuno, Akira Toriumi

研究成果 › 査読

117 被引用数 (Scopus)

抄録

The flat band voltage in metal/HfLO_xSiO₂/Si capacitors has been investigated as a function of La concentration in HfLaO _x. We have found that with an increase of La concentration, the flat band voltage shifts to the negative direction. Furthermore, we demonstrate that the flat band voltage in this system is determined by the La concentration at HfLaO_xSiO₂ interface. This result suggests that the flat band voltage shift is due to the dipole layer formed at the HfLaO _xSiO₂ interface rather than the Fermi-level pinning at the metal/HfLaO_x interface.

本文言語	English
ページ（範囲）	7251-7255
ページ数	5
ジャーナル	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
巻	46
号	11
DOI	https://doi.org/10.1143/JJAP.46.7251
出版ステータス	Published - 2007 11月 6
外部発表	はい

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

文献へのアクセス

10.1143/JJAP.46.7251

他のファイルとリンク

引用スタイル

@article{539ec098fa0b4794b90508d020f95b28,

title = "Study of La-induced flat band voltage shift in metal/HfLaO x/SiO2/Si capacitors",

abstract = "The flat band voltage in metal/HfLOxSiO2/Si capacitors has been investigated as a function of La concentration in HfLaO x. We have found that with an increase of La concentration, the flat band voltage shifts to the negative direction. Furthermore, we demonstrate that the flat band voltage in this system is determined by the La concentration at HfLaOxSiO2 interface. This result suggests that the flat band voltage shift is due to the dipole layer formed at the HfLaO xSiO2 interface rather than the Fermi-level pinning at the metal/HfLaOx interface.",

keywords = "Dipole, Flat band voltage, HfLaO, High-k dielectric, Interface",

author = "Yoshiki Yamamoto and Koji Kita and Kentaro Kyuno and Akira Toriumi",

year = "2007",

month = nov,

day = "6",

doi = "10.1143/JJAP.46.7251",

language = "English",

volume = "46",

pages = "7251--7255",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "11",

}

TY - JOUR

T1 - Study of La-induced flat band voltage shift in metal/HfLaO x/SiO2/Si capacitors

AU - Yamamoto, Yoshiki

AU - Kita, Koji

AU - Kyuno, Kentaro

AU - Toriumi, Akira

PY - 2007/11/6

Y1 - 2007/11/6

N2 - The flat band voltage in metal/HfLOxSiO2/Si capacitors has been investigated as a function of La concentration in HfLaO x. We have found that with an increase of La concentration, the flat band voltage shifts to the negative direction. Furthermore, we demonstrate that the flat band voltage in this system is determined by the La concentration at HfLaOxSiO2 interface. This result suggests that the flat band voltage shift is due to the dipole layer formed at the HfLaO xSiO2 interface rather than the Fermi-level pinning at the metal/HfLaOx interface.

AB - The flat band voltage in metal/HfLOxSiO2/Si capacitors has been investigated as a function of La concentration in HfLaO x. We have found that with an increase of La concentration, the flat band voltage shifts to the negative direction. Furthermore, we demonstrate that the flat band voltage in this system is determined by the La concentration at HfLaOxSiO2 interface. This result suggests that the flat band voltage shift is due to the dipole layer formed at the HfLaO xSiO2 interface rather than the Fermi-level pinning at the metal/HfLaOx interface.

KW - Dipole

KW - Flat band voltage

KW - HfLaO

KW - High-k dielectric

KW - Interface

UR - http://www.scopus.com/inward/record.url?scp=35948958613&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=35948958613&partnerID=8YFLogxK

U2 - 10.1143/JJAP.46.7251

DO - 10.1143/JJAP.46.7251

M3 - Article

AN - SCOPUS:35948958613

SN - 0021-4922

VL - 46

SP - 7251

EP - 7255

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 11

ER -