Study of La-induced flat band voltage shift in metal/HfLaO x/SiO2/Si capacitors

Yoshiki Yamamoto, Koji Kita, Kentaro Kyuno, Akira Toriumi

研究成果: Article査読

114 被引用数 (Scopus)

抄録

The flat band voltage in metal/HfLOxSiO2/Si capacitors has been investigated as a function of La concentration in HfLaO x. We have found that with an increase of La concentration, the flat band voltage shifts to the negative direction. Furthermore, we demonstrate that the flat band voltage in this system is determined by the La concentration at HfLaOxSiO2 interface. This result suggests that the flat band voltage shift is due to the dipole layer formed at the HfLaO xSiO2 interface rather than the Fermi-level pinning at the metal/HfLaOx interface.

本文言語English
ページ(範囲)7251-7255
ページ数5
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
46
11
DOI
出版ステータスPublished - 2007 11 6
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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