STUDY OF P-CHANNEL AlGaAs/GaAs MIS-LIKE HETEROSTRUCTURE FET'S.

Kunishige Oe, Makoto Hirano, Fumihiko Yanagawa

研究成果: Article

抜粋

Summary form only given. Dependence of performance of p-channel AlGaAs/GaAs MIS-like heterostructure FETs (HFETs) on device parameters is investigated and estimates are made of expected device performance. Based on the experimental results, the p-channel HFETs are expected to achieve nearly 300-mS/mm transconductance at 77 K in 1- mu m-long gate devices.

元の言語English
ページ(範囲)1839
ページ数1
ジャーナルIEEE Transactions on Electron Devices
ED-33
発行部数11
出版物ステータスPublished - 1986 11
外部発表Yes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

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