Summary form only given. Dependence of performance of p-channel AlGaAs/GaAs MIS-like heterostructure FETs (HFETs) on device parameters is investigated and estimates are made of expected device performance. Based on the experimental results, the p-channel HFETs are expected to achieve nearly 300-mS/mm transconductance at 77 K in 1- mu m-long gate devices.
|ジャーナル||IEEE Transactions on Electron Devices|
|出版ステータス||Published - 1986 11|
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)