Study on collector design of AlGaAs/GaAs heterojunction bipolar transistors by two-dimensional simulation

K. Horio, Y. Iwatsu, A. Oguchi, H. Yanai

研究成果: Paper査読

3 被引用数 (Scopus)

抄録

The cutoff frequency (fT) characteristics of NPN-n+ AlGaAs/GaAs HBTs (heterojunction bipolar transistors) with various n- collector structures are studied by two-dimensional simulation. It is shown that the transit time in the collection depletion layer becomes a more important factor than the collector charging time in the high current region. Therefore, a thinner n- collector layer with higher doping density is desirable for achieving higher cutoff frequency. The introduction of semi-insulating external collector is effective in improving cutoff frequency characteristics in the relatively low current region. However, it is noted that it may lead to the earlier fall of cutoff frequency due to a high injection effect.

本文言語English
ページ195-198
ページ数4
出版ステータスPublished - 1990 12 1
イベントProceedings of the 1990 Bipolar Circuits and Technology Meeting - Minneapolis, MN, USA
継続期間: 1990 9 171990 9 18

Other

OtherProceedings of the 1990 Bipolar Circuits and Technology Meeting
CityMinneapolis, MN, USA
Period90/9/1790/9/18

ASJC Scopus subject areas

  • Engineering(all)

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