Al0.26Ga0.74N/AlN/GaN high-electron-mobility transistor (HEMT) structures with AlN interfacial layers of various thicknesses were grown on 100-mm-diameter sapphire substrates by metalorganic vapor phase epitaxy, and their structural and electrical properties were characterized. A sample with an optimum AlN layer thickness of 1.0 nm showed a highly enhanced Hall mobility (μHall) of 1770 cm2/Vs with a low sheet resistance (ρs) of 365 Ω/sq. (2DEG density ns = 1.0 × 1013/cm2) at room temperature compared with those of a sample without the AlN interfacial layer (μHall = 1287 cm2/Vs, ρs = 539 Ω/sq., and ns = 0.9 × 1013/cm2). Electron transport properties in AlGaN/AlN/GaN structures were theoretically studied, and the calculated results indicated that the insertion of an AlN layer into the AlGaN/GaN heterointerface can significantly enhance the 2DEG mobility due to the reduction of alloy disorder scattering. HEMTs were successfully fabricated and characterized. It was confirmed that AlGaN/AlN/GaN HEMTs with the optimum AlN layer thickness show superior DC properties compared with conventional AlGaN/GaN HEMTs.
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