Study on possible double peaks in cutoff frequency characteristics of AlGaAs/GaAs HBTs by energy transport simulation

T. Okada, K. Horio

研究成果: Article査読

抄録

By using an energy transport model, we simulate cutoff frequency fT- versus collector current density Ic characteristics of npn-n AlGaAs/GaAs heterojunction bipolar transistors (HBTs) with various n--collector thickness and n--doping densities. It is found that the calculated fr characteristics show double peak behavior when the n--layer is thick enough and the n--doping is high enough to allow existence of neutral n--region. The mechanism of the double peak behavior is discussed by studying energy band diagrams, electron-energy profiles and electron-velocity profiles. Particularly, we discuss the origin of the second peak (at higher Ic) which is not usually reported experimentally.

本文言語English
ページ(範囲)437-442
ページ数6
ジャーナルVLSI Design
8
1-4
DOI
出版ステータスPublished - 1998

ASJC Scopus subject areas

  • ハードウェアとアーキテクチャ
  • コンピュータ グラフィックスおよびコンピュータ支援設計
  • 電子工学および電気工学

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