抄録
By using an energy transport model, we simulate cutoff frequency f T- versus collector current density I c characteristics of npn -n AlGaAs/GaAs heterojunction bipolar transistors (HBTs) with various n --collector thickness and n --doping densities. It is found that the calculated fr characteristics show double peak behavior when the n --layer is thick enough and the n --doping is high enough to allow existence of neutral n --region. The mechanism of the double peak behavior is discussed by studying energy band diagrams, electron-energy profiles and electron-velocity profiles. Particularly, we discuss the origin of the second peak (at higher I c) which is not usually reported experimentally.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 437-442 |
| ページ数 | 6 |
| ジャーナル | VLSI Design |
| 巻 | 8 |
| 発行部数 | 1-4 |
| 出版物ステータス | Published - 1998 |
Fingerprint
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Hardware and Architecture
これを引用
Study on possible double peaks in cutoff frequency characteristics of AlGaAs/GaAs HBTs by energy transport simulation. / Okada, T.; Horio, Kazushige.
：: VLSI Design, 巻 8, 番号 1-4, 1998, p. 437-442.研究成果: Article
}
TY - JOUR
T1 - Study on possible double peaks in cutoff frequency characteristics of AlGaAs/GaAs HBTs by energy transport simulation
AU - Okada, T.
AU - Horio, Kazushige
PY - 1998
Y1 - 1998
N2 - By using an energy transport model, we simulate cutoff frequency f T- versus collector current density I c characteristics of npn -n AlGaAs/GaAs heterojunction bipolar transistors (HBTs) with various n --collector thickness and n --doping densities. It is found that the calculated fr characteristics show double peak behavior when the n --layer is thick enough and the n --doping is high enough to allow existence of neutral n --region. The mechanism of the double peak behavior is discussed by studying energy band diagrams, electron-energy profiles and electron-velocity profiles. Particularly, we discuss the origin of the second peak (at higher I c) which is not usually reported experimentally.
AB - By using an energy transport model, we simulate cutoff frequency f T- versus collector current density I c characteristics of npn -n AlGaAs/GaAs heterojunction bipolar transistors (HBTs) with various n --collector thickness and n --doping densities. It is found that the calculated fr characteristics show double peak behavior when the n --layer is thick enough and the n --doping is high enough to allow existence of neutral n --region. The mechanism of the double peak behavior is discussed by studying energy band diagrams, electron-energy profiles and electron-velocity profiles. Particularly, we discuss the origin of the second peak (at higher I c) which is not usually reported experimentally.
KW - Cutoff frequency
KW - Double peaks
KW - Energy transport model
KW - GaAs
KW - Heterojunction bipolar transistor
KW - Velocity overshoot
UR - http://www.scopus.com/inward/record.url?scp=0032318491&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0032318491&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0032318491
VL - 8
SP - 437
EP - 442
JO - VLSI Design
JF - VLSI Design
SN - 1065-514X
IS - 1-4
ER -